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參數(shù)資料
| 型號： | RES070N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 7A條（?。﹟蘇 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | RES070N03 |
RES070N03
Transistors
Switching (30V, 7A)
RES070N03
z
Features
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
z
Structure
Silicon N-channel
MOS FET
z
Equivalent circuit
(1)
Source
(2)
Source
(3)
Source
(4)
Gate
(5)
Drain
(6)
Drain
(7)
Drain
(8)
Drain
(1) (2) (3)
(8) (7) (6) (5)
(8) (7) (6) (5)
(1) (2) (3) (4)
(4)
Gate Protection Diode.
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
z
External dimensions
(Units : mm)
ROHM : SOP8
3.9
0.15
6.0
0.3
1.5
0.1
0.15
Max.1.75
0.5
0.1
5
0
1
0
0
0
0
0
(1)
(4)
(8)
(5)
Each lead has same dimensions
z
Absolute maximum ratings
(Ta=25
°
C)
V
DSS
V
GSS
I
DR
I
DRP
P
D
Tch
30
V
V
A
A
W
C
±20
7
I
D
I
DP
A
A
28
7
28
2
150
I
s
I
sp
A
A
1.3
5.2
Tstg
C
55
～+
150
Symbol
Limits
Unit
Parameter
Pw
≤
10ms, Duty cycle
≤
1%
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Total Power Dissipation(Tc=25C)
Channel Temperature
Storage Temperature
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
相關(guān)PDF資料 |
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| RES100N03 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
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| RES5-F05 | FILTER CHASSIS OHNE IEC EINGANG 5A |
| RES5-F08 | FILTER CHASSIS OHNE IEC EINGANG 8A |
| RES5-F10 | FILTER CHASSIS OHNE IEC EINGANG 10A |
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