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參數(shù)資料
| 型號： | REJ03C0115-0100Z |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| 中文描述： | 4分高速SRAM（1 - MWORD × 4位） |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 88K |
| 代理商： | REJ03C0115-0100Z |
Rev.1.00, Mar.12.2004, page 1 of 11
R1RW0404D Series
4M High Speed SRAM (1-Mword
×
4-bit)
REJ03C0115-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword
×
4-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed and high density
memory, such as cache and buffer memory in system. The R1RW0404D is packaged in 400-mil 32-pin
SOJ for high density surface mounting.
Features
Single supply: 3.3 V
±
0.3 V
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 100 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current : 5 mA (max)
: 0.8 mA (max) (L-version)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center V
CC
and V
SS
type pin out
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