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參數(shù)資料
| 型號(hào)： | REG113 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | DMOS 400mA Low-Dropout Regulator(DMOS 400mA 低壓差穩(wěn)壓器) |
| 中文描述： | 的DMOS 400mA的低壓差穩(wěn)壓器（DMOS的400mA的低壓差穩(wěn)壓器） |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | REG113 |
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REG113
SBVS031C
9
www.ti.com
OUTPUT NOISE
A precision bandgap reference is used to generate the
internal reference voltage, V
REF
. This reference is the domi-
nant noise source within the REG113 and generates approxi-
mately 29
μ
Vrms in the 10Hz to 100kHz bandwidth at the
reference output. The regulator control loop gains up the
reference noise, so that the noise voltage of the regulator is
approximately given by:
V
VrmsR
μ
29
R
2
R
Vrms
μ
29
V
V
N
OUT
REF
=
+
=
1
2
(1)
Since the value of V
REF
is 1.26V, this relationship reduces to:
V
Vrms
V
V
N
OUT
=
μ
23
(2)
Connecting a capacitor, C
NR
, from the Noise Reduction (NR)
pin to ground (as shown in Figure 3) forms a low-pass filter
for the voltage reference. For C
NR
= 10nF, the total noise in
the 10Hz to 100kHz bandwidth is reduced by approximately
a factor of 2.8 for V
OUT
= 3.3V. This noise reduction effect is
shown in Figure 4, and as RMS Noise Voltage vs C
NR
in the
Typical Characteristics section.
Noise can be further reduced by carefully choosing an output
capacitor, C
OUT
. Best overall noise performance is achieved
with very low (< 0.22
μ
F) or very high (> 2.2
μ
F) values of C
OUT
(see the RMS Noise Voltage vs C
OUT
typical characteristic).
The REG113 uses an internal charge pump to develop an
internal supply voltage sufficient to drive the gate of the
DMOS pass element above V
IN
. The charge-pump switching
noise (nominal switching frequency = 2MHz) is not measur-
able at the output of the regulator over most values of I
OUT
and C
OUT
.
DROPOUT VOLTAGE
The REG113 uses an N-channel DMOS as the pass ele-
ment. When (V
IN
–
V
OUT
) is less than the dropout voltage
(V
DROP
), the DMOS pass device behaves like a resistor;
therefore, for low values of (V
IN
–
V
OUT
), the regulator input-
to-output resistance is the Rds
ON
of the DMOS pass element
(typically 600mW). For static (DC) loads, the REG113 will
FIGURE 4. Output Noise versus Noise Reduction Capacitor.
0.1
100
1k
10
10k
110
100
90
80
70
60
50
40
30
20
N
C
NR
(pF)
RMS NOISE VOLTAGE vs C
NR
REG113-5.0
REG113-3.3
REG113-2.5
C
= 0
μ
F
10Hz < BW < 100kHz
FIGURE 3. Block Diagram.
Over-Current
Over Temp
Protection
V
(1.26V)
Low-Noise
Charge Pump
DMOS
Output
V
OUT
NR
GND
Enable
REG113
V
IN
C
(optional)
typically maintain regulation down to a (V
IN
–
V
OUT
) voltage
drop of 250mV at full rated output current. In Figure 5, the
bottom line (DC dropout) shows the minimum V
IN
to V
OUT
voltage drop required to prevent dropout under DC load
conditions.
FIGURE 5. Transient and DC Dropout.
0
50
100
150
200
250
350
300
400
600
500
400
300
200
100
0
D
I
OUT
(mA)
DROPOUT VOLTAGE vs I
OUT
Dropout for 0mA to I
OUT
Transient
DC Dropout
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