REF1112
SBOS283
2
www.ti.com
REF1112 - 1.25V
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
REVERSE BREAKDOWN VOLTAGE
I
REF
= 1.2
μ
A
1.2475
-0.2
1.25
1.2525
+ 0.2
V
%
TEMPERATURE COEFFICIENT
1.2
μ
A
<
I
REF
<
5mA
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
10
15
15
30
50
ppm/°C
ppm/°C
ppm/°C
MINIMUM OPERATING CURRENT
1
1.2
μ
A
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT
30
100
ppm/mA
1.2
μ
A
<
I
REF
<
5mA
REVERSE DYNAMIC IMPEDANCE
1.2
μ
A
<
I
REF
<
5mA
0.037
0.125
LOW-FREQUENCY NOISE
(1)
0.1Hz
<
I
REF
<
10Hz
25
μ
V
PP
ppm
THERMAL HYSTERESIS
(2)
100
LONG-TERM STABILITY
+25°C ± 0.1°C
TEMPERATURE CHARACTERISTICS
Specified Range
Operating Range
Storage Range
Thermal Resistance
θ
JA
SOT23-3 Surface-Mount
60
ppm/kHr
–40
–55
–65
+125
+125
+150
°C
°C
°C
PRELIMINARY ELECTRICAL CHARACTERISTICS
Boldface
limits apply over the specified temperature range,
T
A
= –40°C to +125°C
.
At T
A
= +25°C, I
REF
= 1.2
μ
A, and C
LOAD
= 10nF, unless otherwise noted.
135
°C/W
(1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole low-pass chebyshev filter at 10Hz.
(2) Thermal hysteresis is defined as the change in output voltage after operating the device at 25°C, cycling the device through the specified temperature range, and
returning to 25°C.
Reverse Breakdown Current ............................................................10mA
Forward Current ...............................................................................10mA
Operating Temperature ................................................. –55°C to +125°C
Storage Temperature .................................................... –65°C to +150°C
Junction Temperature .................................................................. +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
(1) Stresses above these ratings may cause permanent damage. Exposure
to absolute maximum conditions for extended periods may degrade device
reliability. These are stress ratings only, and functional operation of the device
at these or any other conditions beyond those specified is not implied.
ABSOLUTE MAXIMUM RATINGS
(1)
PACKAGE/ORDERING INFORMATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from performance
degradation to complete device failure. Texas Instruments recom-
mends that all integrated circuits be handled and stored using appro-
priate ESD protection methods.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet published specifications.
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESIGNATOR
(1)
PACKAGE
MARKING
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
PRODUCT
PACKAGE-LEAD
REF1112
SOT23-3
"
DBZ
"
–40°C to +125°C
"
R11A
"
REF1112AIDBZT
REF1112AIDBZR
Tape and Reel, 250
Tape and Reel, 3000
"
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.