參數(shù)資料
型號: REF102R
英文描述: Precision VOLTAGE REFERENCE
中文描述: 高精度電壓基準(zhǔn)
文件頁數(shù): 3/9頁
文件大?。?/td> 182K
代理商: REF102R
REF102
3
TEMPERATURE
RANGE
MAX INITIAL
ERROR (mV)
MAX DRIFT
(ppm/
°
C)
PRODUCT
PACKAGE
REF102AU
REF102AP
REF102BP
REF102AM
REF102BM
REF102CM
REF102RM
REF102SM
8-Pin SOIC
8-Pin Plastic DIP
8-Pin Plastic DIP
Metal TO-99
Metal TO-99
Metal TO-99
Metal TO-99
Metal TO-99
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–55
°
C to +125
°
C
–55
°
C to +125
°
C
±
10
±
10
±
5
±
10
±
5
±
2.5
±
10
±
5
±
10
±
10
±
5
±
10
±
5
±
2.5
±
10
±
5
ORDERING INFORMATION
PIN CONFIGURATIONS
Top View
DIP/SOIC
8
7
1
4
5
3
2
6
Common
Trim
V
OUT
NC
NC
NC
Noise Reduction
8
7
6
5
1
2
3
4
Noise Reduction
NC
V
OUT
Trim
NC
V+
Com
NC
V+
Top View
TO-99
Input Voltage ......................................................................................+40V
Operating Temperature
P,U .................................................................................. –25
°
C to +85
°
C
M ................................................................................... –55
°
C to +125
°
C
Storage Temperature Range
P,U .................................................................................. –40
°
C to +85
°
C
M ................................................................................... –65
°
C to +150
°
C
Lead Temperature (soldering, 10s)................................................ +300
°
C
(SOIC, 3s) ....................................................... +260
°
C
Short-Circuit Protection to Common or V+............................... Continuous
ABSOLUTE MAXIMUM RATINGS
PACKAGE INFORMATION
PACKAGE DRAWING
NUMBER
(1)
PRODUCT
PACKAGE
REF102AU
REF102AP
REF102BP
REF102AM
REF102BM
REF102CM
REF102RM
REF102SM
8-Pin SOIC
8-Pin Plastic DIP
8-Pin Plastic DIP
Metal-TO-99
Metal-TO-99
Metal-TO-99
Metal-TO-99
Metal-TO-99
182
006
006
001
001
001
001
001
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
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