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參數資料
| 型號： | RDS035L03 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 30V的五（巴西）直| 3.5AI（四）|蘇 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | RDS035L03 |
RDS035L03
Transistors
Switching (30V, 3.5A)
RDS035L03
z
Features
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
z
Application
Switching
z
Structure
Silicon N-channel
MOS FET
z
External dimensions
(Units : mm)
ROHM : SOP8
3.9
0.15
6.0
0.3
1.5
0.1
0.15
Max.1.75
0.5
0.1
5
0
1
0
0
0
0
0
(1)
(4)
(8)
(5)
Each lead has same dimensions
z
Equivalent circuit
(1) Tr1
Source
(2) Tr1
Gate
(3) Tr2
Source
(4) Tr2
Gate
(5) Tr2
Drain
(6) Tr2
Drain
(7) Tr1
Drain
(8) Tr1
Drain
(8) (7) (6) (5)
(1) (2) (3) (4)
Gate Protection Diode.
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
(1)
(2)
(3)
(5)
(6)
(7)
(8)
(4)
z
Absolute maximum ratings
(Ta=25
°
C)
V
DSS
V
GSS
I
DR
I
DRP
P
D
Tch
30
V
V
A
A
W
C
±20
3.5
I
D
I
DP
A
A
14
3.5
14
2
150
I
s
I
sp
A
A
1.3
5.2
Tstg
C
55
～+
150
Symbol
Limits
Unit
Parameter
Pw
≤
10ms, Duty cycle
≤
1%
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Total Power Dissipation(Tc=25C)
Channel Temperature
Storage Temperature
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
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