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參數(shù)資料
| 型號： | RD48F4P0ZB00 |
| 廠商： | Intel Corp. |
| 英文描述： | Coaxial Cable; Coaxial RG/U Type:11; Impedance:75ohm; Conductor Size AWG:14; No. Strands x Strand Size:Solid; Jacket Material:Fluoropolymer; Conductor Material:Steel; Conductor Plating:Copper; Jacket Color:Black RoHS Compliant: Yes |
| 中文描述： | 英特爾StrataFlash嵌入式存儲器 |
| 文件頁數(shù)： | 1/102頁 |
| 文件大小： | 1609K |
| 代理商： | RD48F4P0ZB00 |
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Order Number: 306666, Revision: 001
April 2005
Intel StrataFlash
Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
The Intel StrataFlash
Embedded Memory (P30) product is the latest generation of Intel
StrataFlash
memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel
130 nm ETOX VIII process technology.
■
High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to-
data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming
(BEFP) at 5 μs/byte (Typ)
— 1.8 V buffered programming at 7 μs/byte (Typ)
■
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
■
Voltage and Power
— V
CC
(core) voltage: 1.7 V – 2.0 V
— V
CCQ
(I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 μA (Typ) for 256-Mbit
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
■
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX VIII process technology (130 nm)
■
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
— Absolute write protection: V
PP
= V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■
Software
— 20 μs (Typ) program suspend
— 20 μs (Typ) erase suspend
— Intel
Flash Data Integrator optimized
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
■
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP
package
— 64/128/256/512-Mbit densities in 64-Ball
Intel
Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in
Intel
QUAD+ SCSP
— 16-bit wide data bus
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| RD48F4444PPVBQ0 | Intel StrataFlash Embedded Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RD48F4P0ZBQ0 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| RD48F4P0ZT00 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| RD48F4P0ZTQ0 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| RD4CB2600 | 功能描述:固態(tài)繼電器-工業(yè)安裝 RoHS:否 制造商:Crydom 控制電壓范圍:4 VDC to 32 VDC 負(fù)載電壓額定值:7 VDC to 72 VDC 負(fù)載電流額定值:160 A 觸點形式: 輸出設(shè)備:SSR 安裝風(fēng)格:Panel |
| RD4CB2602 | 功能描述:通用繼電器 RD RELAY RoHS:否 制造商:Omron Electronics 觸點形式:1 Form A (SPST-NO) 觸點電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風(fēng)格:Chassis 觸點材料: |
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