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參數(shù)資料
| 型號(hào)： | RC30S08 |
| 廠商： | Shanghai Sunrise Electronics Co., LTD. |
| 英文描述： | SILICON SILASTIC CELL RECTIFIER |
| 中文描述： | 硅硅橡膠細(xì)胞整流 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 14K |
| 代理商： | RC30S08 |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC30S01 THRU RC30S10
SILICON SILASTIC
CELL RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 30A
FEATURES
Low cost
High surge capability
Solderable electrode surfaces
Ideal for hybrids
MECHANICAL DATA
Polarity: Bottom or upper electrode denotes
cathode according to the notice in
package
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load, derate
current by 20%)
SYMBOL
RC30S
01
100
70
100
RC30S
02
200
140
200
RC30S
04
400
280
400
RC30S
06
600
420
600
RC30S
08
800
560
800
RC30S
10
1000
700
1000
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
a
=55
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
V
RRM
V
RMS
V
DC
V
V
V
(Note 2)
T
a
=25
o
C
T
a
=150
o
C
(Note 1)
(Note 3) R
θ
(ja)
μ
A
μ
A
pF
o
C/W
o
C
(at rated DC blocking voltage)
Typical Junction Capacitance
Typical Thermal Resistance
Storage and Operation Junction Temperature T
STG
,T
J
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
C
J
http://www.sse-diode.com
RATINGS
I
F(AV)
30
A
I
FSM
A
V
F
0.95
V
-50 to +150
I
R
10
1000
300
1
400
TECHNICAL
SPECIFICATION
Dimensions in inches and (millimeters)
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