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RBV3500 - RBV3510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 35 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
3500
RBV
3501
RBV
3502
RBV
3504
RBV
3506
RBV
3508
RBV
3510
UNIT
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc = 55
°
C
I
F(AV)
35
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
I
FSM
I
2
t
V
F
400
Amps.
A
2
S
Volts
Current Squared Time at t < 8.3 ms.
660
Maximum Forward Voltage per Diode at IF = 17.5 Amps.
1.1
Maximum DC Reverse Current Ta = 25
°
C
at Rated DC Blocking Voltage Ta = 100
°
C
I
R
10
μ
A
μ
A
°
C/W
°
C
°
C
I
R(H)
200
Typical Thermal Resistance (Note 1)
R
θ
JC
T
J
1.5
Operating Junction Temperature Range
10
Storage Temperature Range
STG
- 40 to + 150
Notes :
1. Thermal Resistance from junction to case with units mounted on heatsink.
UPDATE : AUGUST 3, 1998
RATING
RBV25
Dimensions in millimeters
C3
4.9
±
0.2
3.9
±
0.2
~
3.2
±
0.1
~
1
±
1
±
2
±
0.7
±
0.1
1.0
±
0.1
2.0
±
0.2
30
±
0.3
7.5
±
0.2
10
±
0.2
+
7.5
±
0.2
1
±