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參數(shù)資料
| 型號(hào)： | RBV-608 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Bridge Diodes |
| 中文描述： | 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | RBV-60, 4 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 23K |
| 代理商： | RBV-608 |
01
5
40
50
10
20
20ms
I
F
(
120
RBV-601, 602
Ta—I
F(AV)
Derating
0
25
Ambient Temperature Ta (
°
C)
50
75
100
125
150
0
1.0
2.0
3.0
6.0
4.0
5.0
40
0
25
Ambient Temperature Ta (
°
C)
50
75
100
125
150
0
1.0
2.0
3.0
6.0
4.0
5.0
40
0
25
Ambient Temperature Ta (
°
C)
50
75
100
125
150
0
1.0
2.0
3.0
6.0
4.0
5.0
40
RBV-604, 606
Ta—I
F(AV)
Derating
RBV-608
0 1
5
50
10
40
20ms
I
F
(
170
100
120
140
60
80
100
0 1
5
60
90
50
10
30
20ms
I
F
(
150
120
80
20
60
–
+
*
RBV-606H t
rr
5.0
μ
s
*
0.5
1.0
0
1.5
1
10
100
0.1
0.01
T
a
=
°
C
100
°
C
60
°
C
25
°
C
0.5
1.0
0
1.5
1
10
100
0.1
0.01
T
a
=
°
C
100
°
C
60
°
C
25
°
C
0.5
1.0
0
1.5
1
10
100
0.1
0.01
T
a
=
°
C
100
°
C
60
°
C
25
°
C
10
7.5 7.5
30
1
1
4-1.0
4.6
3.6
2.7
2
1
C3
0.7
3.2
±
0.1
–
+
Bridge Diodes
Parameter
Type No.
Absolute Maximum Ratings
V
RM
(V)
I
(A)
V
F
(V)
I
F
(A)
Rth (j-c)
I
R
(
μ
A)
I
R
(H)
(
μ
A)
Tj
(
°
C)
Tstg
(
°
C)
Electrical Characteristics (Ta
=
25
°
C)
(
°
C/W)
(g)
Mass
Others
RBV-601
100
200
400
600
6.0
3.0
10
3.0
6.45
–40 to +150
170
150
140
120
100
200
1.00
1.05
0.95
1.05
800
600
RBV-602
RBV-604
RBV-606
RBV-608
RBV-606H
A
V
R
=V
RM,
Tj=100
°
C
max per element
V
R
=
V
RM
max per element
20
I
F (AV)
(A)
With Heatsink
Fig.
Half-Single Shot
max per
element
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Ta—I
F(AV)
Derating
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
A
Fig.
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| RBV608D | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
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