- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374565 > RA07H3340M-E01 (Mitsubishi Electric Corporation) MITSUBISHI RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO PDF資料下載
參數(shù)資料
| 型號： | RA07H3340M-E01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MITSUBISHI RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO |
| 中文描述： | 三菱射頻MOSFET模塊330 - 400MHz的7瓦12.5V便攜式/移動通信 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 62K |
| 代理商： | RA07H3340M-E01 |
MITSUBISHI RF MOSFET MODULE
R A 0 7 H 3 3 4 0 M
330-400MHz
7W
12.5V PORTABLE/ MOBILE RADIO
RA07H3340M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA07H3340M is a 7-watt RF MOSFET Amplifier Module
for 12.5-volt portable/ mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>7W @ V
DD
=12.5V, V
GG
=3.5V, P
in
=20mW
η
T
>40% @ P
out
=7W (V
GG
control), V
DD
=12.5V, P
in
=20mW
Broadband Frequency Range: 330-400MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
Module Size: 30 x 10 x 5.4 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA07H3340M-E01
RA07H3340M-01
(Japan - packed without desiccator)
Antistatic tray,
25 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA07H4047M-E01 | PT08SP18-32S |
| RA07H4047M | 400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
| RA07H4047M-01 | 400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
| RA07M1317M-E01 | GIGATRUE 550 CAT6 PATCH 6 FT, NON BOOT, PURPLE |
| RA07M1317M | 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA07H4047M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
| RA07H4047M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO |
| RA07H4047M-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
| RA07H4047M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO |
| RA07H4047M-E01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。