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參數(shù)資料
| 型號： | RA06H8285M-E01 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | MITSUBISHI RF MOSFET MODULE |
| 中文描述： | 三菱射頻MOSFET模塊 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | RA06H8285M-E01 |
MITSUBISHI RF MOSFET MODULE
R A06H8285M
820-851MHz
6W
12.5V MOBILE RADIO
RA06H8285M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA06H8285MB is a 6-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 820- to
851-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>6W,
η
T
>35% @ V
DD
=12.5V, V
GG
=5V, P
in
=1mW
Broadband Frequency Range: 820-851MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
Module Size: 60.5 x 14 x 6.4 mm
Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA06H8285M-E01
RA06H8285M-01
(Japan - packed without desiccator)
Antistatic tray,
20 modules/tray
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
BLOCK
DIAGRAM
2
4
1
5
3
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