
PHOTOMULTlPLlER TUBES
R632, R632-01
S-1 Spectral Response(QE 0.05% at 1.06
μ
m <R632-01>)
19mm(3/4 Inch) Diameter, 10–stage, Head–On Type
GENERAL
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Ambient Temperature
Parameter
Value
1500
250
0.01
Description/Value
400 to 1200
800
Ag–O–Cs
15
Borosilicate glass
Linear focused
10
12–pin glass base
E678–12L(supplied)
Unit
nm
nm
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Structure
Number of Stages
mm dia.
Window Material
Dynode
Base
SuitabIe Socket
Supply Voltage
-80 to +50
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25 )
Parameter
Luminous(2856K)
Radiant at 800nm
Red/White Ratio
(with Toshiba IR–D80A)
Quantum Efficiency
at 1.06 m
Luminous(2856K)
Radiant at 800nm
Max.
Typ.
20
1.9
Min.
10
Cathode
Sensitivity
Sensitivity
Gain
Anode Dark Current(at 4A/lm)
5
0.05
10
950
10
5
0.02
0.14
%
%
R632
R632–01
R632
R632–01
R632
R632–01
150
800
2.2
25
500
2000
0.1
A/lm
A/W
5
Anode Pulse Rise Time
Electron Transit Time
ns
ns
nA
nA
Time Response
Electrode
Ratio
SuppIy Voltage : 1250Vdc, K:Cathode, Dy:Dynode, P:Anode
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
1.5
1
1
1
1
1
1
1
1
1
1
Anode characteristics are measured with the voItage distribution ratio shown below.
NOTE:
Anode
Unit
A/lm
mA/W
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or commission. Specifications are
subjected to change without notice. No patent right are granted to any of the circuits described herein.
1996 Hamamatsu Photonics K.K.
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