參數(shù)資料
型號(hào): R5F6451MJFD
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144
封裝: 20 X 20 MM, 0.50 MM PITCH, PLASTIC, LQFP-144
文件頁(yè)數(shù): 108/121頁(yè)
文件大?。?/td> 813K
代理商: R5F6451MJFD
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)當(dāng)前第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)
REJ03B0230-0110
Rev.1.10
Page 87 of 116
Sep 06, 2010
R32C/151 Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasure per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it
is considered the programming/erasure is performed just once. However a write in the same
address more than once for one erasure is disabled (overwrite disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
This data retention includes 3000 hours in Ta = 125°C and 7000 hours in Ta = 85°C.
4.
Contact a Renesas Electronics sales office regarding data retention time other than the above.
Figure 5.3
Power Supply Circuit Timing
Table 5.9
E2dataFlash Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
Programming and erasure endurance of flash memory (1) 100000
times
Word program time
100
2000
s
Block erasure time
32 byte block
15
200
ms
tPS
Flash memory circuit start-up stabilization time
35
50
s
Data retention (2)
Ta = 55°C (3, 4)
20
years
Table 5.10
Power Supply Circuit Timing Characteristics
(VCC = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Measurement
condition
Value
Unit
Min. Typ. Max.
td(P-R)
Internal power supply start-up stabilization
time after the main power supply is turned on
2ms
t d(P-R)
VCC
PLL oscillator-
output waveform
Internal power supply start-up
stabilization time after the main
power supply is turned on
Recommended
operating voltage
t d(P-R)
Supply voltage for
internal logic
相關(guān)PDF資料
PDF描述
R5F6451NJFD 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144
R5F6451NKFD 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144
R5F64514KFD 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144
R5F64525KFD 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144
R5F6452NKFD 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R5F6451MKFD 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F6451MLFD 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F6451NJFD 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F6451NKFD 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F6451NLFD 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU