參數(shù)資料
型號(hào): R5F64211KFB
元件分類(lèi): 微控制器/微處理器
英文描述: 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP100
封裝: 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100
文件頁(yè)數(shù): 95/113頁(yè)
文件大小: 744K
代理商: R5F64211KFB
REJ03B0237-0050 Rev.0.50 Jul 31, 2008
Page 82 of 111
Under development
Preliminary Specification
This is a preliminary specification and is subject to change.
R32C/121 Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasure per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it
is considered the programming/erasure is performed just once. However a write in the same
address more than once for one erasure is disabled. (overwrite disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
This data retention includes the following 10000 hours: 3000 hours in Ta = 125°C and 7000 hours in
Ta = 85°C.
4.
Please contact a Renesas sales office regarding data retention time other than the above.
Table 5.9
E2data Flash Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
Programming and erasure endurance of flash memory (1)
100000
times
Word program time
100
2000
s
Block erasure time
32 Kbyte block
15
200
ms
tPS
Flash memory circuit start-up stabilization time
35
50
s
Data retention (2)
Ta = 55°C (3, 4)
20
years
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