參數(shù)資料
型號(hào): R5F6420FLFB
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP100
封裝: 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100
文件頁(yè)數(shù): 72/103頁(yè)
文件大?。?/td> 1017K
代理商: R5F6420FLFB
REJ03B0236-0110 Rev.1.10 Mar 02, 2010
Page 68 of 97
R32C/120 Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasure per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it
is considered the programming/erasure is performed just once. However a write in the same
address more than once for one erasure is disabled. (overwrite disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
This data retention includes 3000 hours in Ta = 125°C and 7000 hours in Ta = 85°C.
4.
Please contact a Renesas sales office regarding data retention time other than the above.
Figure 5.3
Power Supply Circuit Timing
Table 5.9
E2dataFlash Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
Programming and erasure endurance of flash memory (1)
100000
times
Word program time
100
2000
s
Block erasure time
32 byte block
15
200
ms
tPS
Flash memory circuit start-up stabilization time
35
50
s
Data retention (2)
Ta = 55°C (3, 4)
20
years
Table 5.10
Power Supply Circuit Timing Characteristics
(VCC = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Measurement
condition
Value
Unit
Min.
Typ. Max.
td(P-R)
Internal power supply start-up stabilization
time after the main power supply is turned on
2ms
t d(P-R)
VCC
PLL oscillator-
output waveform
Internal power supply start-up
stabilization time after the main
power supply is turned on
Recommended
operating voltage
t d(P-R)
Supply voltage for
internal logic
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