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參數(shù)資料
| 型號： | R5F64201LFB |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP100 |
| 封裝： | 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100 |
| 文件頁數(shù)： | 63/98頁 |
| 文件大?。?/td> | 677K |
| 代理商： | R5F64201LFB |
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REJ03B0236-0050 Rev.0.50 Jul 31, 2008
Page 66 of 96
Under development
Preliminary Specification
This is a preliminary specification and is subject to change.
R32C/120 Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasures per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If 4-word write is performed in 512 different addresses in the block A of 4 Kbyte and then the
block is erased, it is considered the programming/erasure is performed just once.
However a write in the same address more than once for one erasure is disabled. (overwrite
disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
This data retention includes 3000 hours in Ta = 125°C and 7000 hours in Ta = 85°C.
4.
Please contact a Renesas sales office regarding data retention time other than the above.
Table 5.8
Flash Memory Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
—
Programming and erasure endurance of flash
memory (1)
Program area
1000
times
Data area
10000
times
—
4-word program time
Program area
150
900
s
Data area
300
1700
s
—
Lock bit-program time
Program area
70
500
s
Data area
140
1000
s
—
Block erasure time
4 Kbyte block
0.12
3.0
s
32 Kbyte block
0.17
3.0
s
64 Kbyte block
0.20
3.0
s
tPS
Flash memory circuit start-up stabilization time
65
s
—
Data retention (2)
Ta = 55°C (3, 4)
20
years
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