參數(shù)資料
型號： R5F64110DFB
元件分類： 微控制器/微處理器
英文描述： 32-BIT, FLASH, 50 MHz, MICROCONTROLLER, PQFP100
封裝： 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100
文件頁數(shù)： 73/107頁
文件大?。?/td> 1192K
代理商： R5F64110DFB
REJ03B0227-0110 Rev.1.10 Sep 17, 2009
Page 66 of 99
R32C/111 Group
5. Electrical Characteristics
Note:
1.
The value listed in the table is the minimum VCC1 to retain RAM data.
Notes:
1.
Program/erase definition
This value represents the number of erasures per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If 4-word write is performed in 512 different addresses in the block A of 4 Kbyte and then the
block is erased, it is considered the programming/erasure is performed just once.
However a write in the same address more than once for one erasure is disabled. (overwrite
disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
Please contact a Renesas sales office regarding data retention time other than the above.
Table 5.7
RAM Electrical Characteristics
(VCC1 =VCC2 = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Measurement
condition
Value
Unit
Min.
Typ.
Max.
VRDR
RAM data retention voltage (1)
in stop mode
2.0
V
Table 5.8
Flash Memory Electrical Characteristics
(VCC1 = VCC2 = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
—
Programming and erasure endurance of flash
memory (1)
Program area
1000
times
Data area
10000
times
—
4-word program time
Program area
150
900
s
Data area
300
1700
s
—
Lock bit-program time
Program area
70
500
s
Data area
140
1000
s
—
Block erasure time
4 Kbyte block
0.12
3.0
s
32 Kbyte block
0.17
3.0
s
64 Kbyte block
0.20
3.0
s
—
Data retention (2)
Ta = 55°C (3)
10
years
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