參數(shù)資料
型號(hào)： R5F213G2DNSP
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO24
封裝： 5.60 X 7.80 MM, 0.65 MM, PLASTIC, SSOP-24
文件頁數(shù)： 20/45頁
文件大小： 521K
代理商： R5F213G2DNSP
R8C/3GD Group
5. Electrical Characteristics
REJ03B0289-0100 Rev.1.00
Feb 26, 2010
Page 25 of 41
Notes:
1. VCC = 2.7 to 5.5 V at Topr = 0 to 60 C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Figure 5.2
Time delay until Suspend
Table 5.5
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance (2)
1,000 (3)
times
Byte program time
80
500
s
Block erase time
0.3
s
td(SR-SUS)
Time delay from suspend request until
suspend
5+CPU clock
× 3 cycles
ms
Interval from erase start/restart until
following suspend request
0
s
Time from suspend until erase restart
30+CPU clock
× 1 cycle
s
td(CMDRST-
READY)
Time from when command is forcibly
stopped until reading is enabled
30+CPU clock
× 1 cycle
s
Program, erase voltage
2.7
5.5
V
Read voltage
1.8
5.5
V
Program, erase temperature
0
60
C
Data hold time (7)
Ambient temperature = 55 C20
year
FST6 bit
Suspend request
(FMR21 bit)
Fixed time
Clock-dependent
time
Access restart
FST6, FST7: Bit in FST register
FMR21: Bit in FMR2 register
FST7 bit
td(SR-SUS)
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R5F213G2DNSP#U0 制造商:Renesas Electronics Corporation 功能描述:R8C3GD 8KB 1.8/5.5V -20 TO 85C 24SSOP - Trays 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 24SSOP
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R5F213G4ADNP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
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