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| 型號(hào)： | R5F213G2CNNP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | MICROCONTROLLER, QCC24 |
| 封裝： | 4 X 4 MM, 0.50 MM PITCH, QFN-24 |
| 文件頁數(shù)： | 29/59頁 |
| 文件大?。?/td> | 654K |
| 代理商： | R5F213G2CNNP |
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R8C/3GC Group
5. Electrical Characteristics
Under development Preliminary document
Specifications in this document are tentative and subject to change.
REJ03B0301-0010 Rev.0.10
Page 35 of 56
May 24, 2010
Notes:
1. The measurement condition is VCC = 1.8 V to 5.5 V and Topr =
20 to 85°C (N version) / 40 to 85°C (D version).
2. Select the voltage detection level with bits VDSEL0 and VDSEL1 in the OFS register.
3. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA25 bit in the VCA2
register to 0.
4. Time until the voltage monitor 0 reset is generated after the voltage passes Vdet0.
Notes:
1. The measurement condition is VCC = 1.8 V to 5.5 V and Topr =
20 to 85°C (N version) / 40 to 85°C (D version).
2. Select the voltage detection level with bits VD1S0 to VD1S3 in the VD1LS register.
3. Time until the voltage monitor 1 interrupt request is generated after the voltage passes Vdet1.
4. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA26 bit in the VCA2
register to 0.
Table 5.21
Voltage Detection 0 Circuit Electrical Characteristics
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
Vdet0
Voltage detection level Vdet0_0 (2)
1.80
1.90
2.05
V
Voltage detection level Vdet0_1 (2)
2.15
2.35
2.50
V
Voltage detection level Vdet0_2 (2)
2.70
2.85
3.05
V
Voltage detection level Vdet0_3 (2)
3.55
3.80
4.05
V
Voltage detection 0 circuit response time (4)
At the falling of VCC from 5 V
to (Vdet0_0
0.1) V
6
150
s
Voltage detection circuit self power consumption
VCA25 = 1, VCC = 5.0 V
1.5
A
td(E-A)
Waiting time until voltage detection circuit
operation starts (3)
100
s
Table 5.22
Voltage Detection 1 Circuit Electrical Characteristics
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
Vdet1
Voltage detection level Vdet1_0 (2)
At the falling of VCC
2.00
2.20
2.40
V
Voltage detection level Vdet1_1 (2)
At the falling of VCC
2.15
2.35
2.55
V
Voltage detection level Vdet1_2 (2)
At the falling of VCC
2.30
2.50
2.70
V
Voltage detection level Vdet1_3 (2)
At the falling of VCC
2.45
2.65
2.85
V
Voltage detection level Vdet1_4 (2)
At the falling of VCC
2.60
2.80
3.00
V
Voltage detection level Vdet1_5 (2)
At the falling of VCC
2.75
2.95
3.15
V
Voltage detection level Vdet1_6 (2)
At the falling of VCC
2.85
3.10
3.40
V
Voltage detection level Vdet1_7 (2)
At the falling of VCC
3.00
3.25
3.55
V
Voltage detection level Vdet1_8 (2)
At the falling of VCC
3.15
3.40
3.70
V
Voltage detection level Vdet1_9 (2)
At the falling of VCC
3.30
3.55
3.85
V
Voltage detection level Vdet1_A (2)
At the falling of VCC
3.45
3.70
4.00
V
Voltage detection level Vdet1_B (2)
At the falling of VCC
3.60
3.85
4.15
V
Voltage detection level Vdet1_C (2)
At the falling of VCC
3.75
4.00
4.30
V
Voltage detection level Vdet1_D (2)
At the falling of VCC
3.90
4.15
4.45
V
Voltage detection level Vdet1_E (2)
At the falling of VCC
4.05
4.30
4.60
V
Voltage detection level Vdet1_F (2)
At the falling of VCC
4.20
4.45
4.75
V
Hysteresis width at the rising of Vcc in voltage
detection 1 circuit
Vdet1_0 to Vdet1_5
selected
0.07
V
Vdet1_6 to Vdet1_F
selected
0.10
V
Voltage detection 1 circuit response time (3)
At the falling of VCC from
5 V to (Vdet1_0
0.1) V
60
150
s
Voltage detection circuit self power consumption
VCA26 = 1, VCC = 5.0 V
1.7
A
td(E-A)
Waiting time until voltage detection circuit operation
starts (4)
100
s
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| R5F213G2CNNP#U0 | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:R8C3GC 8+2KB 1.8/5.5V -20 85C 24WQFN - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:16BIT MCU FLASH 8K 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 24QFN |
| R5F213G2CNNP#V0 | 功能描述:MCU 8KB ROM 1KB RAM 24-WQFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/3GC 標(biāo)準(zhǔn)包裝:300 系列:78K0R/Ix3 核心處理器:78K/0R 芯體尺寸:16-位 速度:40MHz 連通性:3 線 SIO，I²C，LIN，UART/USART 外圍設(shè)備:DMA，LVD，POR，PWM，WDT 輸入/輸出數(shù):27 程序存儲(chǔ)器容量:16KB（16K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:38-SSOP 包裝:托盤 |
| R5F213G2CNSP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU |
| R5F213G2CNSP#U0 | 制造商:Renesas Electronics Corporation 功能描述:R8C3GC 8+2KB 1.8/5.5V -20 85C 24SSOP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 24SSOP |
| R5F213G2CNSP#W4 | 制造商:Renesas Electronics Corporation 功能描述:R8C3GC 8+2KB 1.8/5.5V -20 85C 24SSOP T&R - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 24SSOP |
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