參數(shù)資料
型號(hào)： R5F21387ANFP
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP80
封裝： 12 X 12 MM, 0.50 MM PITCH, PLASTIC, LQFP-80
文件頁(yè)數(shù)： 26/56頁(yè)
文件大小： 469K
代理商： R5F21387ANFP
R8C/38A Group
5. Electrical Characteristics
REJ03B0274-0110 Rev.1.10 Sep 28, 2009
Page 32 of 54
Under development Preliminary specification
Specifications in this manual are tentative and subject to change.
Notes:
1. VCC = 2.7 to 5.5 V and Topr = 0 to 60
°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one. However, the same address must not be programmed more than once
per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed.)
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.7
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
—
Program/erase endurance (2)
1,000 (3)
——
times
—
Byte program time
—
80
—
s
—
Block erase time
—
0.3
—
s
td(SR-SUS)
Time delay from suspend request until
suspend
—
5 + CPU clock
× 3 cycles
ms
—
Interval from erase start/restart until
following suspend request
33
—
ms
—
Suspend interval necessary for auto-
erasure to complete
33
—
ms
—
Time from suspend until erase restart
—
30 + CPU clock
× 1 cycle
s
—
Program, erase voltage
2.7
—
5.5
V
—
Read voltage
1.8
—
5.5
V
—
Program, erase temperature
0
—
60
°C
—
Data hold time (7)
Ambient temperature = 55
°C20
—
year
相關(guān)PDF資料
PDF描述
R5F21388EKFP FLASH, 20 MHz, MICROCONTROLLER, PQFP80
R5F21388SDFP 32-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP80
R5F2138CSNFPD 32-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP80
R5F21388SDFPD 32-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP80
R5F2138ASDFPD 32-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP80
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R5F21387ANLG 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F21387ANXXXFP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F21387ANXXXLG 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F21387CDFP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F21387CDFP#U0 制造商:Renesas Electronics Corporation 功能描述:R8C38C 48+4KB 1.8/5.5V -40 85C 80LQFP - Trays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*