參數(shù)資料
型號(hào)： R5F21322ADSP
元件分類： 微控制器/微處理器
英文描述： 32-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO20
封裝： 4.40 X 6.50 MM, 0.65 MM PITCH, PLASTIC, LSSOP-20
文件頁(yè)數(shù)： 27/58頁(yè)
文件大?。?/td> 455K
代理商： R5F21322ADSP
R8C/32A Group
5. Electrical Characteristics
REJ03B0229-0100 Rev.1.00
Sep 10, 2009
Page 31 of 53
Notes:
1.
VCC = 2.7 to 5.5 V at Topr = 0 to 60
°C, unless otherwise specified.
2.
Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3.
Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6.
Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7.
The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.6
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance (2)
1,000 (3)
times
Byte program time
80
s
Block erase time
0.3
s
td(SR-SUS)
Time delay from suspend request until
suspend
5 + CPU clock
× 3 cycles
ms
Interval from erase start/restart until
following suspend request
33
ms
Suspend interval necessary for auto-
erasure to complete
33
ms
Time from suspend until erase restart
30 + CPU clock
× 1 cycle
s
Program, erase voltage
2.7
5.5
V
Read voltage
1.8
5.5
V
Program, erase temperature
0
60
°C
Data hold time (7)
Ambient temperature = 55
°C20
year
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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