參數(shù)資料
型號： R5F21262SDXXXFP
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP32
封裝： 7 X 7 MM, 0.80 MM PITCH, PLASTIC, LQFP-32
文件頁數(shù)： 50/75頁
文件大小： 622K
代理商： R5F21262SDXXXFP
R8C/26 Group, R8C/27 Group
5. Electrical Characteristics
Rev.2.10
Sep 26, 2008
Page 52 of 69
REJ03B0168-0210
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = -40 to 85
°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
is the same as that in program ROM.
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A and B can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. 125
°C for K version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.38
Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance(2)
10,000(3)
times
Byte program time
(program/erase endurance
≤ 1,000 times)
50
400
s
Byte program time
(program/erase endurance
> 1,000 times)
65
s
Block erase time
(program/erase endurance
≤ 1,000 times)
0.2
9
s
Block erase time
(program/erase endurance
> 1,000 times)
0.3
s
td(SR-SUS)
Time delay from suspend request until
suspend
97 + CPU clock
× 6 cycles
s
Interval from erase start/restart until
following suspend request
650
s
Interval from program start/restart until
following suspend request
0
ns
Time from suspend until program/erase
restart
3 + CPU clock
× 4 cycles
s
Program, erase voltage
2.7
5.5
V
Read voltage
2.7
5.5
V
Program, erase temperature
-40
°C
Data hold time(9)
Ambient temperature = 55
°C20
year
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相關代理商/技術參數(shù)
參數(shù)描述
R5F21262SNFP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS 16-BIT SINGLE-CHIP MCU R8C FAMILY / R8C/2x SERIES
R5F21262SNFP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 16-Bit R8C CISC 8KB Flash 3.3V/5V 32-Pin LQFP Tray 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 8KB FLASH 3.3V/5V 32LQFP - Trays 制造商:Renesas Electronics 功能描述:R8C 20MHz 制造商:Renesas Electronics Corporation 功能描述:IC R8C/26 MCU FLASH 32LQFP 制造商:Renesas Electronics Corporation 功能描述:R8C Series 16 bit 512 B RAM 8 kB Flash Microcontroller SMT - LQFP-32 制造商:Renesas 功能描述:MCU 16-Bit R8C CISC 8KB Flash 3.3V/5V 32-Pin LQFP Tray
R5F21262SNFP#V2 功能描述:IC R8C/26 MCU FLASH 32LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/2x/26 其它有關文件:STM32F101T8 View All Specifications 特色產品:STM32 32-bit Cortex MCUs 標準包裝:490 系列:STM32 F1 核心處理器:ARM? Cortex?-M3 芯體尺寸:32-位 速度:36MHz 連通性:I²C，IrDA，LIN，SPI，UART/USART 外圍設備:DMA，PDR，POR，PVD，PWM，溫度傳感器，WDT 輸入/輸出數(shù):26 程序存儲器容量:64KB（64K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:10K x 8 電壓 - 電源 (Vcc/Vdd):2 V ~ 3.6 V 數(shù)據(jù)轉換器:A/D 10x12b 振蕩器型:內部 工作溫度:-40°C ~ 85°C 封裝/外殼:36-VFQFN，36-VFQFPN 包裝:托盤 配用:497-10030-ND - STARTER KIT FOR STM32497-8853-ND - BOARD DEMO STM32 UNIV USB-UUSCIKSDKSTM32-PL-ND - KIT IAR KICKSTART STM32 CORTEXM3497-8512-ND - KIT STARTER FOR STM32F10XE MCU497-8505-ND - KIT STARTER FOR STM32F10XE MCU497-8304-ND - KIT STM32 MOTOR DRIVER BLDC497-6438-ND - BOARD EVALUTION FOR STM32 512K497-6289-ND - KIT PERFORMANCE STICK FOR STM32MCBSTM32UME-ND - BOARD EVAL MCBSTM32 + ULINK-MEMCBSTM32U-ND - BOARD EVAL MCBSTM32 + ULINK2更多... 其它名稱:497-9032STM32F101T8U6-ND
R5F21262SNFP#W4 功能描述:MCU 8KB ROM 512B RAM 32-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/2x/26 標準包裝:300 系列:78K0R/Ix3 核心處理器:78K/0R 芯體尺寸:16-位 速度:40MHz 連通性:3 線 SIO，I²C，LIN，UART/USART 外圍設備:DMA，LVD，POR，PWM，WDT 輸入/輸出數(shù):27 程序存儲器容量:16KB（16K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉換器:A/D 8x10b 振蕩器型:內部 工作溫度:-40°C ~ 85°C 封裝/外殼:38-SSOP 包裝:托盤
R5F21262SNFP#X6 功能描述:MCU 8KB ROM 512B RAM 32-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/2x/26 標準包裝:300 系列:78K0R/Ix3 核心處理器:78K/0R 芯體尺寸:16-位 速度:40MHz 連通性:3 線 SIO，I²C，LIN，UART/USART 外圍設備:DMA，LVD，POR，PWM，WDT 輸入/輸出數(shù):27 程序存儲器容量:16KB（16K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉換器:A/D 8x10b 振蕩器型:內部 工作溫度:-40°C ~ 85°C 封裝/外殼:38-SSOP 包裝:托盤
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