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參數(shù)資料
| 型號： | R5F2121AKFP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP48 |
| 封裝： | 7 X 7 MM, 0.50 MM PITCH, PLASTIC, LQFP-48 |
| 文件頁數(shù)： | 16/45頁 |
| 文件大?。?/td> | 418K |
| 代理商： | R5F2121AKFP |
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R8C/20 Group, R8C/21 Group
5. Electrical Characteristics
Rev.2.00 Aug 27, 2008
Page 23 of 41
REJ03B0120-0200
NOTES:
1.
VCC = 2.7 to 5.5 V at Topr = -40 to 85
°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2.
Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 1,000), each block can be erased n times.
For example, if 1,024 1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is
erased, the programming/erasure endurance still stands at one. However, the same address must not be programmed more
than once per erase operation (overwriting prohibited).
3.
Endurance to guarantee all electrical characteristics after program and erase (1 to Min. value can be guaranteed).
4.
In a system that executes multiple programming operations, the actual erasure endurance can be reduced by writing to
sequential addresses in turn so that as much of the block as possible is used up before performing an erase operation. For
example, when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to
128 groups before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each
block and limit the number of erase operations to a certain number.
5.
If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
least three times until the erase error does not occur.
6.
Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7.
The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.4
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance(2)
R8C/20 Group
100(3)
times
R8C/21 Group
times
Byte program time
50
400
s
Block erase time
0.4
9
s
td(SR-SUS)
Time delay from suspend request until
erase suspend
97 + CPU clock
× 6 cycle
s
Interval from erase start/restart until
following suspend request
650
s
Interval from program start/restart until
following suspend request
0
ns
Time from suspend until program/erase
restart
3 + CPU clock
× 4 cycle
s
Program, erase voltage
2.7
5.5
V
Read voltage
2.7
5.5
V
Program, erase temperature
0
60
°C
Data hold time(7)
Ambient temperature = 55
°C20
year
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| R5F2121AKFP#U0 | 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit R8C CISC 96KB Flash 3.3V/5V 48-Pin LQFP Tray 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 96KB FLASH 3.3V/5V 48LQFP - Trays 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 96KB FLASH 48LQFP |
| R5F2121AKFP#V0 | 功能描述:MCU FLASH 96K 5K CMOS 48-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/2x/21 標準包裝:96 系列:PIC® 16F 核心處理器:PIC 芯體尺寸:8-位 速度:20MHz 連通性:I²C，SPI 外圍設備:欠壓檢測/復位，POR，PWM，WDT 輸入/輸出數(shù):11 程序存儲器容量:3.5KB（2K x 14） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:128 x 8 電壓 - 電源 (Vcc/Vdd):2.3 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:14-TSSOP（0.173"，4.40mm 寬） 包裝:管件 |
| R5F2121CJFP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU R8C FAMILY / R8C/2x SERIES |
| R5F2121CJFP#U0 | 功能描述:MCU FLASH 128K 6K CMOS 48-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/2x/21 標準包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲器容量:- 程序存儲器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR) |
| R5F2121CKFP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU R8C FAMILY / R8C/2x SERIES |
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