參數(shù)資料
型號(hào): R5F211B3NP
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28
封裝: 5 X 5 MM, 0.50 MM PITCH, PLASTIC, WQFN-28
文件頁(yè)數(shù): 25/51頁(yè)
文件大?。?/td> 438K
代理商: R5F211B3NP
R8C/1A Group, R8C/1B Group
5. Electrical Characteristics
Rev.1.40
Dec 08, 2006
Page 29 of 45
REJ03B0144-0140
NOTES:
1.
This condition is not applicable when using with Vcc
≥ 1.0 V.
2.
When turning power on after the time to hold the external power below effective voltage (Vpor1) exceeds10 s, refer to Table
3.
tw(por2) is the time to hold the external power below effective voltage (Vpor2).
NOTES:
1.
When not using voltage monitor 1, use with Vcc
≥ 2.7 V.
2.
tw(por1) is the time to hold the external power below effective voltage (Vpor1).
Figure 5.3
Reset Circuit Electrical Characteristics
Table 5.8
Reset Circuit Electrical Characteristics (When Using Voltage Monitor 1 Reset)
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
Vpor2
Power-on reset valid voltage
-20
°C ≤ Topr ≤ 85°C
Vdet1
V
tw(Vpor2-Vdet1) Supply voltage rising time when power-on reset is
-20
°C ≤ Topr ≤ 85°C,
tw(por2)
≥ 0s(3)
100
ms
Table 5.9
Reset Circuit Electrical Characteristics (When Not Using Voltage Monitor 1 Reset)
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
Vpor1
Power-on reset valid voltage
-20
°C ≤ Topr ≤ 85°C
0.1
V
tw(Vpor1-Vdet1)
Supply voltage rising time when power-on reset is
deasserted
0
°C ≤ Topr ≤ 85°C,
tw(por1)
≥ 10 s(2)
100
ms
tw(Vpor1-Vdet1)
Supply voltage rising time when power-on reset is
deasserted
-20
°C ≤ Topr < 0°C,
tw(por1)
≥ 30 s(2)
100
ms
tw(Vpor1-Vdet1)
Supply voltage rising time when power-on reset is
deasserted
-20
°C ≤ Topr < 0°C,
tw(por1)
≥ 10 s(2)
1ms
tw(Vpor1-Vdet1)
Supply voltage rising time when power-on reset is
deasserted
0
°C ≤ Topr ≤ 85°C,
tw(por1)
≥ 1 s(2)
0.5
ms
NOTES:
1. Hold the voltage inside the MCU operation voltage range (Vccmin or above) within the sampling time.
2. The sampling clock can be selected. Refer to 7. Voltage Detection Circuit for details.
3. Vdet1 indicates the voltage detection level of the voltage detection 1 circuit. Refer to 7. Voltage Detection Circuit for details.
Vdet1(3)
Vpor1
Internal reset signal
(“L” valid)
tw(por1)
tw(Vpor1–Vdet1)
Sampling time(1, 2)
Vdet1(3)
1
fRING-S
× 32
1
fRING-S
× 32
Vpor2
Vccmin
tw(por2) tw(Vpor2–Vdet1)
相關(guān)PDF資料
PDF描述
R5F211A4XXXNP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28
R5F211B4DD 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP20
R5F211B3XXXNP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28
R5F211B4XXXNP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28
R5F211A1DD 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP20
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R5F211B3NP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 12KB FLASH 3.3V/5V 28PIN HWQFN - Trays 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 12KB FLASH 28QFN
R5F211B3NP#V0 功能描述:IC R8C MCU FLASH 12K 28HWQFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:R8C/1x/1B 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI,I²C,UART/USART 外圍設(shè)備:POR,PWM,WDT 輸入/輸出數(shù):40 程序存儲(chǔ)器容量:- 程序存儲(chǔ)器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC(J 形引線) 包裝:帶卷 (TR)
R5F211B3SP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER R8C FAMILY / R8C/1x SERIES
R5F211B3SP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 12KB FLASH 3.3V/5V 20PIN LSSOP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit R8C R8C CISC 12KB Flash 3.3V/5V 20-Pin LSSOP Tube 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 12KB FLASH 20SSOP 制造商:Renesas Electronics Corporation 功能描述:R8C/1B Series 3/5 V 12 KB Rom 1 kB Ram Microcontroller - SSOP-20
R5F211B3SP#UO 制造商:Renesas Electronics Corporation 功能描述:FD