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參數(shù)資料
| 型號： | R5F21193NP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28 |
| 封裝： | 5 X 5 MM, 0.50 MM PITCH, PLASTIC, WQFN-28 |
| 文件頁數(shù)： | 18/41頁 |
| 文件大?。?/td> | 725K |
| 代理商： | R5F21193NP |
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R8C/18 Group, R8C/19 Group
5. Electrical Characteristics
Rev.1.40
Apr 14, 2006
Page 25 of 38
REJ03B0124-0140
NOTES:
1.
VCC = 2.7 to 5.5 V at Topr = -20 to 85
°C / -40 to 85 °C, unless otherwise specified.
2.
Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one. However, the same address must not be programmed more than once per erase operation (overwriting
prohibited).
3.
Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4.
If emergency processing is required, a suspend request can be generated independent of this characteristic. In that case the
normal time delay to suspend can be applied to the request. However, we recommend that a suspend request with an interval
of less than 650
s is only used once because, if the suspend state continues, erasure cannot operate and the incidence of
erasure error rises.
5.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
6.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7.
Customers desiring programming/erasure failure rate information should contact their Renesas technical support
representative.
8.
-40
°C for D version.
9.
The data hold time includes time that the power supply is off or the clock is not supplied.
Figure 5.2
Transition Time to Suspend
Table 5.5
Flash Memory (Data flash Block A, Block B) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance(2)
times
Byte program time
(Program/erase endurance
≤ 1,000 times)
50
400
s
Byte program time
(Program/erase endurance
> 1,000 times)
65
s
Block erase time
(Program/erase endurance
≤ 1,000 times)
0.2
9
s
Block erase time
(Program/erase endurance
> 1,000 times)
0.3
s
td(SR-SUS)
Time delay from suspend request until
suspend
97+CPU clock
× 6 cycles
s
Interval from erase start/restart until
following suspend request
650
s
Interval from program start/restart until
following suspend request
0
ns
Time from suspend until program/erase
restart
3+CPU clock
× 4 cycles
s
Program, erase voltage
2.7
5.5
V
Read voltage
2.7
5.5
V
Program, erase temperature
-20(8)
85
°C
Data hold time(9)
Ambient temperature = 55
°C20
year
FMR46
Suspend request
(Maskable interrupt request)
Fixed time (97
s)
td(SR-SUS)
Clock-dependent
time
Access restart
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R5F21193NP#U0 | 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit R8C CISC 12KB Flash 3.3V/5V 28-Pin HWQFN Tube 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 12KB FLASH 3.3V/5V 28PIN HWQFN - Trays |
| R5F21193NP#V0 | 功能描述:IC R8C MCU FLASH 12K 28HWQFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/1x/19 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設(shè)備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲器容量:- 程序存儲器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR) |
| R5F21193SP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS 16-BIT SINGLE-CHIP MCU R8C FAMILY / R8C/1x SERIES |
| R5F21193SP#U0 | 功能描述:IC R8C MCU FLASH 12K 20SSOP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/1x/19 產(chǎn)品培訓(xùn)模塊:MCU Product Line Introduction AVR® UC3 Introduction 標(biāo)準(zhǔn)包裝:2,500 系列:AVR®32 UC3 B 核心處理器:AVR 芯體尺寸:32-位 速度:60MHz 連通性:I²C，IrDA，SPI，SSC，UART/USART，USB 外圍設(shè)備:欠壓檢測/復(fù)位，DMA，POR，PWM，WDT 輸入/輸出數(shù):28 程序存儲器容量:128KB（128K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:32K x 8 電壓 - 電源 (Vcc/Vdd):1.65 V ~ 1.95 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 6x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TQFP 包裝:帶卷 (TR) 配用:ATSTK600-TQFP48-ND - STK600 SOCKET/ADAPTER 48-TQFPATAVRONEKIT-ND - KIT AVR/AVR32 DEBUGGER/PROGRMMRATEVK1101-ND - KIT DEV/EVAL FOR AVR32 AT32UC3B 其它名稱:AT32UC3B1128-AUR-NDAT32UC3B1128-AURTR |
| R5F21194DD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS 16-BIT SINGLE-CHIP MCU R8C FAMILY / R8C/1x SERIES |
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