參數(shù)資料
型號(hào)： R5F21152DSP
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO20
封裝： 4.40 X 6.50 MM, 0.65 MM PITCH, PLASTIC, LSSOP-20
文件頁(yè)數(shù)： 17/42頁(yè)
文件大小： 664K
代理商： R5F21152DSP
Rev.2.00
Jan 30, 2006
Page 22 of 37
REJ03B0102-0200
R8C/14 Group, R8C/15 Group
5. Electrical Characteristics
NOTES:
1.
VCC = AVcc = 2.7 to 5.5V at Topr =
20 to 85 °C / 40 to 85 °C, unless otherwise specified.
2.
Definition of program and erase
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that
block, program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time ease.(disable overwriting).
3.
Endurace to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).
4.
Standard of Block A and Block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000
times aer the same as that in program area.
5.
In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram
endurance not to leave blank area as possible such as programming write addresses in turn . If programming a set of 16
bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,
averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for
every block as information and determine the restricted endurance are recommended.
6.
If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
least three times until the erase error does not occur.
7.
Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.
8.
-40
°C for D version.
9.
The data hold time incudes time that the power supply is off or the clock is not supplied.
Table 5.5
Flash Memory (Data flash Block A, Block B) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/Erase Endurance(2)
times
Byte Program Time
(Program/Erase Endurance
≤ 1,000 Times)
VCC = 5.0 V at Topr = 25
°C
50
400
s
Byte Program Time
(Program/Erase Endurance
> 1,000 Times)
VCC = 5.0 V at Topr = 25
°C
65
s
Block Erase Time
(Program/Erase Endurance
≤ 1,000 Times)
VCC = 5.0 V at Topr = 25
°C
0.2
9
s
Block Erase Time
(Program/Erase Endurance
> 1,000 Times)
VCC = 5.0 V at Topr = 25
°C
0.3
s
td(SR-ES)
Time Delay from Suspend Request until
Erase Suspend
8ms
Erase Suspend Request Interval
10
ms
Program, Erase Voltage
2.7
5.5
V
Read Voltage
2.7
5.5
V
Program, Erase Temperature
-20(8)
85
°C
Data Hold Time(9)
Ambient temperature = 55
°C20
year
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R5F21152DSP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 8KB FLASH 3.3V/5V 20PIN LSSOP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 20SSOP
R5F21152DSP#V0 功能描述:IC R8C MCU FLASH 8K 20SSOP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/1x/15 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設(shè)備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲(chǔ)器容量:- 程序存儲(chǔ)器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR)
R5F21152SP 制造商:Renesas Electronics Corporation 功能描述:
R5F21152SP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 16-Bit R8C CISC 8KB Flash 3.3V/5V 20-Pin LSSOP Tube 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 8KB FLASH 3.3V/5V 20PIN LSSOP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 20SSOP
R5F21152SP#V0 功能描述:IC R8C MCU FLASH 8K 20SSOP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/1x/15 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設(shè)備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲(chǔ)器容量:- 程序存儲(chǔ)器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR)
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