參數(shù)資料
型號： R5F2111xxx
廠商： Renesas Technology Corp.
英文描述： SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
中文描述： 單片16位CMOS微機(jī)
文件頁數(shù)： 8/29頁
文件大?。?/td> 275K
代理商： R5F2111XXX
Rev.1.40
Sep 30, 2004
page 16 of 26
REJ09B0034-0140Z
R8C/11 Group
5. Electrical Characteristics
Byte program time
Block erase time
Program, Erase voltage
Read voltage
50
0.4
s
Parameter
Standard
Min.
Typ.
Max
Unit
Note
1: Referenced to VCC1=AVcc=2.7 to 5.5V at Topr = 0 to 60 °C unless otherwise specified.
Measuring condition
Symbol
–
Program, Erase temperature
2.7
0
400
9
5.5
60
s
V
°C
–
Time delay from suspend request until erase
suspend
td(SR-ES)
–
Program/erase cycle
8
ms
100
cycle
Vcc=5.0V, Topr=25 °C
Data-retention duration
–
Topr=55 °C
20
year
Table 5.4 Flash Memory Version Electrical Characteristics
Table 5.5 Voltage Detection Circuit Electrical Characteristics
Symbol
Standard
Typ.
Unit
Measuring condition
Min.
Max.
Parameter
Vdet
Voltage detection level
V
3.8
4.3
NOTES:
1. The measuring condition is Vcc=AVcc=2.7V to 5.5V and Topr= -40°C to 85 °C.
2. This shows the time until the voltage detection interrupt request is generated since the voltage passes Vdet.
3. This shows the required time until the voltage detection circuit operates when setting to "1" again after setting the VC27 bit in the VCR2
register to “0”
Voltage detection interrupt request generating time2
40
nA
Voltage detection circuit self consumption current
Waiting time till voltage detection circuit operation starts3
td(E-A)
VC27=1, VCC=5.0V
3.3
20
600
s
Vccmin
Minimum value of microcomputer operation voltage
2.7
V
FMR46
Erase-suspend request
(interrupt request)
td(SR-ES)
Figure 5.2 Time delay from Suspend Request until Erase Suspend
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