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參數(shù)資料
| 型號： | R5106N311C-TR |
| 廠商： | RICOH COMPANY LTD |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6 |
| 封裝： | SOT-23, 6 PIN |
| 文件頁數(shù)： | 13/17頁 |
| 文件大?。?/td> | 948K |
| 代理商： | R5106N311C-TR |
R5106N
5
ELECTRICAL CHARACTERISTICS
VDD
=6.0V, CT=0.1F, In case of Nch Open Drain Output type, the output pin is pulled up with a resistance of
100k (R5106Nxx1A), unless otherwise noted.
The specification in
is checked and guaranteed by design engineering at 40
°C <
= Topt <
= 105°C.
R5106Nxx1A/C
Topt
=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
VDD
Operating Voltage
0.9
6.0
V
ISS
Supply Current
VDD
= -VDET+0.5V,
Clock pulse input
11
15
A
VD Part
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
Topt
=25°C
×0.990
×1.010
-VDET
Detector Threshold
40°C <
= Topt <
= 105°C
×0.972
×1.015
V
VHYS
Detector Threshold Hysteresis
-VDET
×0.03
-VDET
×0.05
-VDET
×0.07
V
-VDET/
Topt
Detector Threshold
Temperature Coefficient
40°C <
= Topt <
= 105°C
±100
ppm/
°C
tPLH
Output Delay Time
CT=0.1
F
340
370
467
ms
Nch
VDD
=1.2V
VDS
=0.1V
0.38
0.8
mA
IRESETB
Output Current
(RESETB Output pin)
Pch *
1
VDD
=6.0V
VDS
=0.5V
0.65
0.9
mA
WDT Part
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
tWD
Watchdog Timeout period
CT
=0.1F
230
310
450
ms
tWR
Reset Hold Time of WDT
CT
=0.1F
29
34
48
ms
VSCKH
SCK Input "H"
VDD
×0.8
6.0
V
VSCKL
SCK Input "L"
0
VDD
×0.2
V
VINHH
INH Input "H"
1.0
6.0
V
VINHL
INH Input "L"
0
0.35
V
RINH
INH pull-up Resistance
60
110
164
k
tSCKW
SCK Input Pulse Width
VSCKL
=VDD×0.2
VSCKH
=VDD×0.8
500
ns
All of unit are tested and specified under load conditions such that Topt
=25°C except for Detector Threshold
Temperature Coefficient.
*1) In case of CMOS type (R5106Nxx1C)
RECOMMENDED OPERATING CONDITIONS
(ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
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