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參數(shù)資料
| 型號： | R3886 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | PHOTOMULTlPLlER TUBE |
| 中文描述： | PHOTOMULTlPLlER管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | R3886 |
Ruggedized, 38mm(1–1/2 Inch) Diameter, Bialkali Photocathode
10–Stage, Circular–Cage Dynode, Head–On Type
GENERAL
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Avarage Anode Current
Parameter
Value
1250
250
Description/Value
300 to 650
420 50
Bialkali
34
Borosilicate glass
Circular–cage
10
Unit
nm
nm
Spectral Response
Wavelength of Maximum Response
pF
pF
Photocathode
MateriaI
Minimum Effective Area
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
mm dia.
Window Material
Dynode
Direct Interelectrode
Capacitances
Base
SuitabIe Socket
Supply Voltage
0.1
Unit
Vdc
Vdc
mA
3
4
12–pin base JEDEC No.B12–43
E678–12A (supplied)
CHARACTERISTlCS (at 25 )
Parameter
Luminous (2856K)
Max.
Typ.
90
85
10.5
26
Min.
70
Cathode Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)
Anode Pulse Rise Time
Electron Transit Time
Transit Time Spread (FWHM)
Radiant at 420nm
Blue (CS 5 58 filter)
Quantum Efficiency at 390nm
Luminous (2856K)
5.0
10
5
A/W
A/lm
A/lm
mA/W
A/lm b
%
2.5
32
2.2
ns
ns
ns
nA
45
9
10
Time Response
Shoch
100g's, 11 1ms, 3 impact shocks per direction (6 directions)
Vibration
20g's, 50 to 2000Hz, 1 oct per minute, 3 sweeps per axis (3 axes)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrodes
Ratio
SuppIy Voltage : 1000Vdc, K : Cathode, Dy : Dynode, P : Anode
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
2
1
1
1
1
1
1
1
1
1
1
Anode Sensitivity
3
5
Unit
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
ENVIRONMENTAL TESTING
4.3
10
4
Radiant at 420nm
PHOTOMULTlPLlER TUBE
R3886
Anode characteristics are measured with the voItage distribution ratio shown below.
NOTE:
lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1994 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
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