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參數(shù)資料
| 型號： | R375 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | PHOTOMULTIPLIER TUBE |
| 中文描述： | 光電倍增管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 43K |
| 代理商： | R375 |
GENERAL
Parameter
Description/Value
160 to 850
420
Multialkali
46
Synthetic Silica
Box and Grid
10
15-pin glass base
E678-15B (supplied)
Unit
nm
nm
—
mm dia.
—
—
—
—
—
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Base
Suitable Socket
Material
Minimum Effective Area
Structure
Number of Stages
PHOTOMULTIPLIER TUBE
R375
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
2001 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
160 to 850 nm Response (Multialkali)
51 mm (2 Inch) Diameter, 10-stage, Head-On Type
CHARACTERISTICS (at 25
°
C)
Parameter
Luminous (2856 K)
Radiant at 420 nm
Red/White Ratio (R-68)
Luminous (2856 K)
Radiant at 420 nm
Min.
80
—
—
20
—
—
—
—
—
Unit
μ
A/lm
mA/W
—
A/lm
A/W
—
nA
ns
ns
Value
1500
250
0.1
-80 to +50
Unit
V dc
V dc
mA
°
C
Supply Voltage
Average Anode Current
Ambient Temperature
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30 min storage in darkness)
Time Response
Anode Pulse Rise Time
Electron Transit Time
150
64
0.2
80
3.4
×
10
4
5.3
×
10
5
5
9.0
70
—
—
—
—
—
—
20
—
—
Typ.
Max.
Supply Voltage: 1000 V dc, K: Cathode, Dy: Dynode, P: Anode
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Ratio
1
1
1
NOTE:
Anode characteristics are measured with the voltage distribution ratio shown below.
K
G
Dy1
Dy2
Dy3
Dy4
Dy5
1
Dy6
1
Dy7
1
1
Dy8
Dy9
Dy10
P
1
1
1
1
1
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