參數(shù)資料
型號(hào): R3550A
廠商: Hamamatsu Photonics
英文描述: PHOTOMULTIPLIER TUBE
中文描述: 光電倍增管
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 44K
代理商: R3550A
PHOTOMULTIPLIER TUBE
R3550A
GENERAL
Parameter
Description
300 to 650
375
Low Noise Bialkali
22
Borosilicate glass
Linear focused
10
14 pin glass base
E678-14C (supplied)
-30 to +70
-80 to +70
Unit
nm
nm
mm dia.
°
C
°
C
Spectral Response
Peak Wavelength
Photocathode
Window Material
Dynode
Base
Suitable Socket
Operating Ambient Temperature
Storage Temperature
Material
Minimum Effective Area
Structure
Number of Stages
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
For Photon Counting, Low Light Level Detection, Ruggedized,
Low Profile, 25 mm (1 Inch) Diameter, Low Noise Bialkali Photocathode,
70
°
C Operation, 10-stage, Head-on Type
CHARACTERISTICS (at 25
°
C) with Standard Voltage Divider
Parameter
Luminous (2856 K)
Quantum Efficiency at 375 nm
Blue Sensitivity Index (CS 5-58)
Luminous (2856 K)
Min.
30
5
45
Unit
μ
A/lm
%
A/lm
nA
s
-1
ns
ns
Value
1250
250
0.1
Unit
V
V
mA
Supply Voltage
Average Anode Current
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30 min storage in darkness)
Anode Dark Count
Time Response
Anode Pulse Rise Time
Electron Transit Time
1.5
×
10
6
50
18
7
100
2.0
×
10
6
0.5
20
1.5
17
4
60
Typ.
Max.
Supply Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
STANDARD VOLTAGE DIVIDER AND SUPPLY VOLTAGE
Electrodes
Ratio
3
1
1
K
Dy1
Dy2
Dy3
Dy4
1
Dy5
1
Dy6
1
Dy7
1
1
Dy8
Dy9
Dy10
P
1
1
1
NOTE:
Anode characteristics are measured with a voltage distribution ratio shown below
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Shock............1000 m/s
2
, 11 ms, 3 impact shocks per direction (6 directions)
Vibration........200 m/s
2
, 50 Hz to 2000 Hz, 1 oct per minute, 3 sweeps per axis (3 axes)
ENVIRONMENTAL TESTING
相關(guān)PDF資料
PDF描述
R3610 Silicon Power Rectifier
R36100 Silicon Power Rectifier
R36120 Silicon Power Rectifier
R3620 Silicon Power Rectifier
R3640 Silicon Power Rectifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R3553X11/32 制造商:RIVETS 功能描述:
R3553X13/32 制造商:RIVETS 功能描述:
R3553X3/32 制造商:RIVETS 功能描述:
R355CH12FLO 制造商:n/a 功能描述:Inverter Semiconductor
R355CHX 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DISTRIBUTED GATE THYRISTORS