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參數(shù)資料
| 型號(hào)： | R2J20601NP |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Driver - MOS FET Integrated SiP (DrMOS) |
| 中文描述： | 驅(qū)動(dòng)器-場(chǎng)效應(yīng)晶體管集成SiP（代DrMOS） |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | R2J20601NP |
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Rev.5.00 Apr 10, 2006 page 1 of 13
R2J20601NP
Driver – MOS FET Integrated SiP (DrMOS)
REJ03G0237-0500
Rev.5.00
Apr 10, 2006
Description
The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in
a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier
diode (SBD), eliminating the need for an external SBD for this purpose.
Integrating a driver and both high-side and low-side power MOS FETs, the new device is also compliant with the
package standard “Driver – MOS FET integrated SiP (DrMOS)” proposed by Intel Corporation.
Features
Built-in power MOS FET suitable for applications with 12 V input and low output voltage
Built-in driver circuit which matches the power MOS FET
Built-in tri-state input function which can support a number of PWM controllers
VIN operating-voltage range: 16 V max
High-frequency operation (above 1 MHz) possible
Large average output current (35 A)
Achieve low power dissipation (About 5.6 W at 1 MHz, 25 A)
Controllable driver: Remote on/off
Built-in Schottky diode for bootstrapping
Low-side drive voltage can be independently set
Small package: QFN56 (8 mm
×
8 mm
×
0.8 mm)
Outline
MOS FET Driver
Reg5V
VSWH
VCIN
VIN
PWM
DISBL#
BOOT
GH
CGND VLDRV
PGND
GL
1
14
42
29
(Bottom view)
QFN56 package 8 mm
×
8 mm
Driver
Tab
High-side MOS
Tab
Low-side MOS Tab
43
56
28
15
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R2J20601NP_08 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Driver - MOS FET Integrated SiP (DrMOS) |
| R2J20602NP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Integrated Driver - MOS FET (DrMOS) |
| R2J20602NP#13 | 功能描述:IC MOSFET DRVR 12V 40A 56-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| R2J20602NP#G3 | 功能描述:IC MOSFET DRVR 12V 40A 56-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:- 其它有關(guān)文件:VND5E050AK-E View All Specifications 產(chǎn)品培訓(xùn)模塊:VIPower™ M0-5 Smart Power Devices 標(biāo)準(zhǔn)包裝:1,000 系列:VIPower™ 類型:高端 輸入類型:非反相 輸出數(shù):2 導(dǎo)通狀態(tài)電阻:50 毫歐 電流 - 輸出 / 通道:19A 電流 - 峰值輸出:27A 電源電壓:4.5 V ~ 28 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:24-SOP（0.295"，7.50mm 寬）裸露焊盤 供應(yīng)商設(shè)備封裝:PowerSSO-24 包裝:帶卷 (TR) 其它名稱:497-11699-2VND5E050AKTR-E-ND |
| R2J20602NP_10 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Integrated Driver - MOS FET (DrMOS) |
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