參數(shù)資料
型號(hào)： R295CH36D2H1
廠商： WESTCODE SEMICONDUCTORS LTD
元件分類： 晶閘管
英文描述： 1755 A, 3600 V, SCR
封裝： 101A223, 3 PIN
文件頁(yè)數(shù)： 9/15頁(yè)
文件大小： 297K
代理商： R295CH36D2H1
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 1 of 13
August, 2000
WESTCODE Date:-30Aug,2000
Data Sheet Issue:- 1
Provisional Data
Distributed Gate Thyristor
Types R295CH36 to R295CH40
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
3600-4000
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
3600-4000
V
VRRM
Repetitive peak reverse voltage, (note 1)
3600-4000
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
3700-4100
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
IT(AV)
Mean on-state current, Tsink=55°C, (note 2)
890
A
IT(AV)
Mean on-state current. Tsink=85°C, (note 2)
610
A
IT(AV)
Mean on-state current. Tsink=85°C, (note 3)
365
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
1755
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
1525
A
ITSM
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
10.9
kA
ITSM2
Peak non-repetitive surge tp=10ms, VRM
≤10V, (note 5)
12
kA
I
2tI2t capacity for fusing t
p=10ms, VRM=0.6VRRM, (note 5)
5.94×10
5
A
2s
I
2t
I
2t capacity for fusing t
p=10ms, VRM
≤10V, (note 5)
7.20×10
5
A
2s
Maximum rate of rise of on-state current (repetitive), (Note 6)
1000
A/s
diT/dt
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/s
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
2
W
PGM
Peak forward gate power
30
W
VGD
Non-trigger gate voltage, (Note 7)
0.25
V
THS
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% VDRM, IFG=2A, tr
≤0.5s, Tcase=125°C.
7)
Rated VDRM.
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