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參數(shù)資料
| 型號(hào)： | R295CH36C2H9 |
| 廠商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | 1755 A, 3600 V, SCR |
| 封裝： | 101A223, 3 PIN |
| 文件頁(yè)數(shù)： | 12/15頁(yè) |
| 文件大?。?/td> | 297K |
| 代理商： | R295CH36C2H9 |
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WESTCODE
Positive development in power electronics
R295CH36 to R295CH40
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Page 4 of 13
August, 2000
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
()
(
)
Hs
J
th
AV
SINK
P
AV
R
W
T
and
f
E
W
=
=
125
.)
(max
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150s integration time.
i.e.
∫
=
s
rr
dt
i
Q
150
0
.
(iii)
2
1
t
Factor
K
=
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
()
(
)
Hs
J
th
original
SINK
new
SINK
R
f
k
E
T
+
=
)
(
)
(
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
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|---|---|
| R295CH36CD0 | 1755 A, 3600 V, SCR |
| R295CH36CD1 | 1755 A, 3600 V, SCR |
| R295CH36CD2 | 1755 A, 3600 V, SCR |
| R295CH36CD3 | 1755 A, 3600 V, SCR |
| R295CH36CD4 | 1755 A, 3600 V, SCR |
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