參數(shù)資料
型號: R2496
廠商: Hamamatsu Photonics
英文描述: PHOTOMULTIPLIER TUBE
中文描述: 光電倍增管
文件頁數(shù): 1/2頁
文件大?。?/td> 18K
代理商: R2496
GENERAL
Parameter
Description/Value
160 to 650
420
Bialkali
8
Fused silica
Linear focused
8
0.7
2.0
11-pin glass base
Approx. 5
E678-11N (supplied)
Unit
nm
nm
mm dia.
pF
pF
g
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Direct Interelectrode
Capacitances
Base
Weight
Suitable Socket
Material
Minimum Useful Area
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
PHOTOMULTIPLIER TUBE
R2496
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Average Anode Current
Ambient Temperature
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1998 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
For Positron CT Scanner Using BaF
2
Scintillator
10mm (3/8 Inch) Diameter, 8-Stage, Head-On, Bialkali Photocathode
CHARACTERISTICS (at 25
°
C)
Parameter
Luminous (2856K)
Radiant at 420nm
Blue
Luminous (2856K)
Radiant at 420nm
Min.
60
30
Unit
μ
A/lm
mA/W
μ
A/lm-b
A/lm
A/W
nA
ns
ns
Value
1500
0.03
-80 to +50
Unit
Vdc
mA
°
C
Between Anode and Cathode
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30 min. storage in darkness)
Time Response
Anode Pulse Rise Time
Electron Transit Time
95
76
9.5
100
8.0
×
10
4
1.1
×
10
6
2
0.7
9.0
50
Typ.
Max.
Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Distribution Ratio
3
1.5
1.5
K
Dy1
Dy2
Dy3
Dy4
1
Dy5
1
Dy6
1
Dy7
1
Dy8
1
P
1
FEATURES
Coincidence Resolving Time
with BaF
2
-BaF
2
/
22
Na ........................................................................................................................................................... 0.45ns
Fast Time Response
Transit Time Spread (FWHM) .............................................................................................................................................. 0.6ns
Quantum Efficiency at 225nm ................................................................................................................................................... 18%
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