參數(shù)資料
型號: R1RW0408DGE-2LR
廠商: Renesas Technology Corp.
英文描述: 4M High Speed SRAM (512-kword x 8-bit)
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件頁數(shù): 1/14頁
文件大?。?/td> 86K
代理商: R1RW0408DGE-2LR
Rev.1.00, Mar.12.2004, page 1 of 12
R1RW0408D Series
4M High Speed SRAM (512-kword
×
8-bit)
REJ03C0111-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword
×
8-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D
is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
Single supply: 3.3 V
±
0.3 V
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 100 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current : 5 mA (max)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center V
CC
and V
SS
type pin out
: 0.8 mA (max) (L-version)
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相關代理商/技術參數(shù)
參數(shù)描述
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R1RW0408DGE-2PI 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
R1RW0408DGE-2PI#B0 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tube
R1RW0408DGE-2PR 制造商:Renesas Electronics Corporation 功能描述:IC,memory,SRAM,4Mb,high speed,
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