參數(shù)資料
型號(hào)： R1Q3A3609ABG-50R
廠商： Renesas Technology Corp.
英文描述： 36-Mbit QDR™II SRAM 4-word Burst
文件頁(yè)數(shù)： 1/26頁(yè)
文件大?。?/td> 407K
代理商： R1Q3A3609ABG-50R
REJ03C0295-0003 Rev.0.03 Jul. 31, 2007
Page 1 of 24
R1Q3A3636/R1Q3A3618/R1Q3A3609
36-Mbit QDRII SRAM
4-word Burst
REJ03C0295-0003
Preliminary
Rev. 0.03
Jul. 31, 2007
Description
The R1Q3A3636 is a 1,048,576-word by 36-bit, the R1Q3A3618 is a 2,097,152-word by 18-bit, and the R1Q3A3609 is
a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using
full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All
input registers controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These
products are suitable for applications which require synchronous operation, high speed, low voltage, high density and
wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
Features
1.8 V
±
0.1 V power supply for core (V
DD
)
1.4 V to V
DD
power supply for I/O (V
DDQ
)
DLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR read and write operation
Four-tick burst for reduced address frequency
Two input clocks (K and /K) for precise DDR timing at clock rising edges only
Two output clocks (C and /C) for precise flight time and clock skew matching-clock and data delivered together to
receiving device
Internally self-timed write control
Clock-stop capability with μs restart
User programmable impedance output
Fast clock cycle time: 3.0 ns (333 MHz)/3.3 ns (300 MHz)/4.0 ns (250 MHz)/
5.0 ns (200 MHz)/6.0 ns (167 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
Notes: QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress
Semiconductor, IDT, NEC, Samsung, and Renesas Technology Corp.
Preliminary:
The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology's Sales Dept. regarding specifications.
相關(guān)PDF資料
PDF描述
R1Q3A3609ABG-60R 36-Mbit QDR™II SRAM 4-word Burst
R1Q3A3618 36-Mbit QDR™II SRAM 4-word Burst
R1Q3A3618ABG-30R 36-Mbit QDR™II SRAM 4-word Burst
R1Q3A3618ABG-33R 36-Mbit QDR™II SRAM 4-word Burst
R1Q3A3618ABG-40R 36-Mbit QDR™II SRAM 4-word Burst
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R1Q3A3609ABG50RB0 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
R1Q3A3609ABG50RS0 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
R1Q3A3609ABG50RT0 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
R1Q3A3609ABG-60R 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:36-Mbit QDR™II SRAM 4-word Burst
R1Q3A3609ABG60RB0 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*