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參數(shù)資料
| 型號(hào)： | R1Q2A3618ABG-60R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 36-Mbit QDR™II SRAM 2-word Burst |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 394K |
| 代理商： | R1Q2A3618ABG-60R |
REJ03C0294-0003 Rev.0.03 Jul. 31, 2007
Page 1 of 23
R1Q2A3636/R1Q2A3618/R1Q2A3609
36-Mbit QDRII SRAM
2-word Burst
REJ03C0294-0003
Preliminary
Rev. 0.03
Jul. 31, 2007
Description
The R1Q2A3636 is a 1,048,576-word by 36-bit, the R1Q2A3618 is a 2,097,152-word by 18-bit, and the R1Q2A3609 is
a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using
full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All
input registers controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These
products are suitable for applications which require synchronous operation, high speed, low voltage, high density and
wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
Features
1.8 V
±
0.1 V power supply for core (V
DD
)
1.4 V to V
DD
power supply for I/O (V
DDQ
)
DLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR read and write operation
Two-tick burst for low DDR transaction size
Two input clocks (K and /K) for precise DDR timing at clock rising edges only
Two output clocks (C and /C) for precise flight time and clock skew matching-clock and data delivered together to
receiving device
Internally self-timed write control
Clock-stop capability with
μ
s restart
User programmable impedance output
Fast clock cycle time: 4.0 ns (250 MHz)/5.0 ns (200 MHz)/6.0 ns (167 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
Notes: QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress
Semiconductor, IDT, NEC, Samsung, and Renesas Technology Corp.
Preliminary:
The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology's Sales Dept. regarding specifications.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| R1Q2A3636 | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3636ABG-40R | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3636ABG-50R | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3636ABG-60R | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q3A3609 | 36-Mbit QDR™II SRAM 4-word Burst |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R1Q2A3618ABG60RB0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3618ABG60RS0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3618ABG60RT0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3618B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3618BBG-40R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
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