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參數(shù)資料
| 型號： | R1LV1616RSD-5SR |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| 中文描述： | 16Mb的先進(jìn)LPSRAM（100萬wordx16bit / 200萬wordx8bit） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 113K |
| 代理商： | R1LV1616RSD-5SR |
REJ03C0101-0300Z Rev.3.00 2007.08.28
page 1 of 15
REJ03C0101-0300Z
Rev.3.00
2007.08.28
R1LV1616R Series
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
Description
The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[μTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm], a 48pin thin small outline mount device[TSOP / 12mm x 20mm with the pin-
pitch of 0.5mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8
array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
Single 2.7-3.6V power supply
Small stand-by current:2μA (3.0V, typ.)
Data retention supply voltage =2.0V
No clocks, No refresh
All inputs and outputs are TTL compatible
Easy memory expansion by CS1#, CS2, LB# and UB#
Common Data I/O
Three-state outputs: OR-tie capability
OE# prevents data contention on the I/O bus
Process technology: 0.15um CMOS
Features
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| R1LV1616RBG-7SW | 16Mb superSRAM (1M wordx16bit) |
| R1LV1616RSD-7SW | 16Mb superSRAM (1M wordx16bit) |
| R1LV1616RBG-7SI | 16Mb superSRAM (1M wordx16bit) |
| R1LV1616RBG-7SR | 16Mb superSRAM (1M wordx16bit) |
| R1LV1616RBG-8SI | 16Mb superSRAM (1M wordx16bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R1LV1616RSD-7S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSD-7SI | 制造商:Renesas Electronics Corporation 功能描述: |
| R1LV1616RSD-7SI#B0 | 功能描述:IC SRAM 16MBIT 70NS 52UTSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| R1LV1616RSD-7SI#S0 | 制造商:Renesas Electronics Corporation 功能描述:ADVANCED LPSRAM, 16MB,1MX16, P 制造商:Renesas Electronics Corporation 功能描述:ADVANCED LPSRAM, 16MB,1MX16, PBFREE/T&R - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 16MBIT 70NS 52TSOP |
| R1LV1616RSD-7SIB0 | 制造商:Renesas Electronics Corporation 功能描述:Low Power SRAM.16M,x8/x16,70ns,uTSOP52 |
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