參數(shù)資料
型號: R1LV0416DBG-5SI
廠商: Renesas Technology Corp.
英文描述: 4M SRAM (256-kword 】 16-bit)
中文描述: 4分的SRAM(256 - KWord的】16位)
文件頁數(shù): 1/17頁
文件大?。?/td> 168K
代理商: R1LV0416DBG-5SI
Rev.1.00, May.24.2007, page 1 of 15
R1LV0416D Series
4M SRAM (256-kword
×
16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword
×
16-bit, fabricated by Renesas's high-performance 0.15
μ
m
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55/70 ns (max)
Power dissipation:
Standby: 3
μ
W (typ) (V
CC
= 3.0 V)
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature Range: -40 to +85
°
C
相關(guān)PDF資料
PDF描述
R1LV0416DBG-7LI 4M SRAM (256-kword 】 16-bit)
R1LV0416DSB-5SI 4M SRAM (256-kword 】 16-bit)
R1LV0416DSB-7LI 4M SRAM (256-kword 】 16-bit)
R1LV1616H-I Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
R1LV1616HSA-4LI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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