參數(shù)資料
型號(hào): R1LV0414D
廠商: Renesas Technology Corp.
英文描述: 4M SRAM (256-kword 】 16-bit)
中文描述: 4分的SRAM(256 - KWord的】16位)
文件頁(yè)數(shù): 1/14頁(yè)
文件大?。?/td> 154K
代理商: R1LV0414D
Rev.1.00, May.24.2007, page 1 of 12
R1LV0414D Series
4M SRAM (256-kword
×
16-bit)
REJ03C0312-0100
Rev.1.00
May.24.2007
Description
The R1LV0414D is a 4-Mbit static RAM organized 256-kword
×
16-bit, fabricated by Renesas’s high-performance
0.15
μ
m CMOS and TFT technologies. R1LV0414DSeries has realized higher density, higher performance and low
power consumption. The R1LV0414D Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 44-pin TSOP II.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55/70 ns (max)
Power dissipation:
Standby: 3
μ
W (typ) (V
CC
= 3.0 V)
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
Temperature range: -40 to +85
°
C
Ordering Information
Type No.
Access time
55 ns
70 ns
Package
R1LV0414DSB-5SI
R1LV0414DSB-7LI
400-mil 44-pin plastic TSOP II (44P3W-H)
相關(guān)PDF資料
PDF描述
R1LV0414DSB-5SI 4M SRAM (256-kword 】 16-bit)
R1LV0414DSB-7LI 4M SRAM (256-kword 】 16-bit)
R1LV0416CBG-5SI Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)
R1LV0416CBG-7LI Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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