參數(shù)資料
型號(hào)： R1331NS10A
廠商： WESTCODE SEMICONDUCTORS LTD
元件分類： 晶閘管
英文描述： 2687 A, 1000 V, SCR
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 685K
代理商： R1331NS10A
WESTCODE
WESTCODE An IXYS Company
Distributed Gate Thyristor types R1331NS10# to R1331NS12#
Data Sheet. Type R1331NS10# to R1331NS12# Issue 1
Page 2 of 12
December, 2002
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
2.02
ITM=2000A
V
VTM
Maximum peak on-state voltage
-
2.5
ITM=3900A
V
VT0
Threshold voltage
-
1.45
V
rT
Slope resistance
-
0.285
m
(dv/dt)cr Critical rate of rise of off-state voltage
200
-
VD=80% VDRM, Linear ramp, Gate o/c
V/
s
IDRM
Peak off-state current
-
150
Rated VDRM
mA
IRRM
Peak reverse current
-
150
Rated VRRM
mA
VGT
Gate trigger voltage
-
3.0
V
IGT
Gate trigger current
-
300
Tj=25°C
VD=10V, IT=3A
mA
VGD
Gate non-trigger voltage
-
0.25
Rated VDRM
V
IH
Holding current
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.5
1.0
tgt
Turn-on time
-
1.0
2.0
VD=67% VDRM, ITM=1000A, di/dt=60A/s,
IFG=2A, tr=0.5s, Tj=25°C
s
Qrr
Recovered charge
-
200
-
C
Qra
Recovered charge, 50% Chord
-
80
100
C
Irm
Reverse recovery current
-
70
-
A
trr
Reverse recovery time
-
2.2
-
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V
s
-10
15
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/s
tq
Turn-off time (note 2)
-15
20
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/s
s
-
0.022 Double side cooled
K/W
RthJK
Thermal resistance, junction to heatsink
-
0.044 Single side cooled
K/W
F
Mounting force
19
-
26
kN
Wt
Weight
-
510
-
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/s) is represented by an ‘#’ in the device part number. See ordering information
for details of tq codes.
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