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Rev. 1.11 - 10 -
3. Capacitor
As for C
IN
, use a capacitor with low ESR(Equivalent Series Resistance) and a capacity of at least 10
m
F for stable
operation.
C
OUT
can reduce ripple of Output Voltage, therefore 47
m
F to 100
m
F tantalum type is recommended.
4. Lx Transistor
Pch Power MOS FET is required for this IC.
Its breakdown voltage between gate and source should be a few volt higher than Input Voltage.
In the case of Input Voltage is low, to turn on MOS FET completely, select a MOS FET with low threshold voltage.
If a large load current is necessary for your application and important, choose a MOS FET with low ON resistance
for good efficiency.
If a small load current is mainly necessary for your application, choose a MOS FET with low gate capacity for good
efficiency.
Maximum continuous drain current of MOS FET should be larger than peak current, ILmax.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R1221N15AC-TR | 制造商:RICOH 制造商全稱:RICOH electronics devices division 功能描述:Step-down DC/DC Converter with Voltage Detector |
| R1221N15AD | 制造商:RICOH 制造商全稱:RICOH electronics devices division 功能描述:Step-down DC/DC Converter with Voltage Detector |
| R1221N15AD-TR | 制造商:RICOH 制造商全稱:RICOH electronics devices division 功能描述:Step-down DC/DC Converter with Voltage Detector |
| R1221N15AE | 制造商:RICOH 制造商全稱:RICOH electronics devices division 功能描述:Step-down DC/DC Converter with Voltage Detector |
| R1221N15AE-TR | 制造商:RICOH 制造商全稱:RICOH electronics devices division 功能描述:Step-down DC/DC Converter with Voltage Detector |
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