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參數(shù)資料
| 型號(hào)： | R1211D002X |
| 英文描述： | Power Management ICs |
| 中文描述： | 電源管理IC |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | R1211D002X |
Rev. 0.05 - 9 -
I
TYPICAL APPLICATION AND TECHNICAL NOTES
<A/C Version>
C3
Inductor
Diode
NMOS
V
IN
EXT
DELAY VFB
GND AMPOUT
C1
C2
C4
R1
R2
R3
C5 R4
NMOS: IRF7601 (International Rectifier)
Inductor:10
μ
H (TDK, LDR Series)
Diode: CRS02 (Toshiba)
C1: 4.7
μ
F(Ceramic)
C2: 0.22
μ
F(Ceramic)
C3: 22
μ
F(Tantalum)
C4: 680pF(Ceramic)
C5: 2200pF(Ceramic)
R1: Output Voltage Setting Resistor 1
R2: Output Voltage Setting Resistor 2
R3: 30k
R4: 30k
<B/D Version>
Inductor
Diode
NMOS
VIN EXT
DELAY VFB
GND CE
C1
C2
C3
C4
R1
R2
R3
CE Control
NMOS: IRF7601 (International Rectifier)
Inductor: 10
μ
H (TDK, LDR Series)
Diode: CRS02 (Toshiba)
C1: 4.7
μ
F (Ceramic) R1 : Setting Output Voltage Resistor1
C2: 0.22
μ
F (Ceramic)
R2 : Setting Output Voltage Resistor2
C3: 22
μ
F (Tantalum)
R3 : 30k
C4: 680pF(Ceramic)
When you use these ICs, consider the following issues;
G
Use a 1
μ
F or more capacitance value of bypass capacitor between VIN pin and GND, C1 as shown in the typical
applications above.
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