參數(shù)資料
型號： R1151N4.5B-TR
英文描述： Analog IC
中文描述： 模擬IC
文件頁數(shù)： 4/26頁
文件大?。?/td> 426K
代理商： R1151N4.5B-TR
Rev. 1.11
- 4 -
I
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Unit
Input Voltage
V
IN
20
V
Input Voltage( CE /CE/CD Pin)
V
CE/CD
-0.3 ~ V
IN
+0.3
V
Output Voltage(V
OUT
Pin)
V
OUT
-0.3 ~ V
IN
+0.3
V
Output Voltage(EXT Pin)
V
EXT
-0.3 ~ V
IN
+0.3
V
Output Voltage(V
DET
Pin)
V
DET
-0.3 ~ V
IN
+0.3
V
EXT Output Current
I
EXT
30
mA
Power Dissipation
P
D
150
mW
Operating Temperature Range
Topt
-40 ~ 85
°
C
Storage Temperature Range
Tstg
-55 ~ 125
°
C
I
ELECTRICAL CHARACTERISTICS
G
R1151NXXXA/B
Symbol
V
OUT
I
OUT
V
OUT
/
I
OUT
V
DIF
I
SS
Istandby
I
EXTleak
V
OUT
/
V
IN
Topt=25
°
C
Unit
V
A
Item
Conditions
MIN.
V
OUT
×
0.98
TYP.
MAX.
V
OUT
×
1.02
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
Supply Current (Standby)
EXT Leakage Current
Line Regulation
V
IN
= Set V
OUT
+1V
I
OUT
= 50mA
V
IN
- V
OUT
= 1.0V
V
IN
= Set V
OUT
+1V
1mA
≤
I
OUT
100mA
I
OUT
= 100mA
V
IN
= Set V
OUT
+1V, I
OUT
= 0mA
V
IN
= 18.5V
1
Note
Refer to the Load Regulation Table
0.1
Note
70
15
0.2
100
V
μ
A
μ
A
μ
A
%/V
0.5
0.10
Set V
OUT
+0.5V
≤
V
IN
≤
18.5V
I
OUT
= 50mA
f = 1kHz, Ripple 0.5Vp-p
V
IN
= Set V
OUT
+1V
0
0.02
RR
V
IN
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Current Limit
60
dB
V
ppm
/
°
C
mA
18.5
V
OUT
/
T
I
OUT
= 10mA
-40
°
C
≤
Topt
≤
85
°
C
Base Current I
B
of PNP Tr.
V
IN
- V
OUT
= 1.0V
Base Current I
B
of PNP Tr.
V
OUT
= 0V
±100
Ilim
8
27
I
RPT
Short Current Limit
CE/CE Pull-up/down
Resistance
CE/CE Input Voltage “H”
CE/CE Input Voltage “L”
0.7
mA
R
UD
2
M
V
CEH
1.5
V
IN
V
V
CEL
0
0.25
-V
DET
×
1.025
-V
DET
×
0.07
10.0
V
-V
DET
Detector Threshold
-V
DET
×
0.975
-V
DET
×
0.03
2.0
V
V
HYS
Detector Threshold
Hysteresis Range
Output Current 2
Detector Threshold
Temperature Coefficient
Output Delay Time
Minimum Operating
Voltage
-V
DET
×
0.05
5.0
V
I
OUT2
V
DD
= 1.5V, V
DS
= 0.5V
-40
°
C
≤
Topt
≤
85
°
C
mA
ppm
/
°
C
ms
V
DET
/
T
tPLH
±100
0.1
V
DDL
0.9
1.1
V
Note: This item depends on the capability of external PNP transistor. Use low saturation type transistor with hFE value range of
100 to 300.
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