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參數(shù)資料
| 型號(hào)： | R1127NC32V |
| 廠商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | 2247 A, 3200 V, SCR |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 680K |
| 代理商： | R1127NC32V |
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
Page 1 of 12
February, 2003
Date:- 18 Feb, 2003
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R1127NC32# to R1127NC36#
(Old Type Number: D315CH21-36)
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
3200-3600
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
3200-3600
V
VRRM
Repetitive peak reverse voltage, (note 1)
3200-3600
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
3300-3700
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
IT(AV)M
Maximum average on-state current, Tsink=55°C, (note 2)
1127
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 2)
760
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 3)
448
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
2247
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
1895
A
ITSM
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
12.8
kA
ITSM2
Peak non-repetitive surge tp=10ms, Vrm
≤10V, (note 5)
14.1
kA
I
2tI2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
819×10
3
A
2s
I
2t
I
2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
994×10
3
A
2s
Critical rate of rise of on-state current (repetitive), (Note 6)
1000
A/s
(di/dt)cr
Critical rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/s
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
5
W
PGM
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% VDRM, IFG=2A, tr
≤0.5s, Tcase=125°C.
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