參數(shù)資料
型號: QT8006W-FREQ
廠商: Q-TECH CORP
元件分類: TCXO, sine
英文描述: TCXO, SINE OUTPUT, 10 MHz - 150 MHz
封裝: HERMETIC SEALED, METAL, DDIP-24/8
文件頁數(shù): 4/7頁
文件大小: 554K
代理商: QT8006W-FREQ
QT800 DDIP Sine-Wave
REV.
Q-TECH Corporation
10150 W. Jefferson Blvd.
Culver City, CA 90232
SIZE
A
CAGE NO.
51774
Sheet 4 of 7
-
3.2.2 Environmental Conditions
Sine Vibration
MIL-STD-202, Method 204, TC “D”
Random Vibration
MIL-STD-202, Method 214 TC “I-K” (15 minutes per axis)
Shock
MIL-STD-202, Method 213, TC “F”
Acceleration
MIL-STD-883, Method 2001, TC “A”
Altitude
50,000 feet minimum to deep space
Radiation
Radiation testing is not performed, but these TCXOs have been acceptable for
use in environments up to 100K rads by analysis of the components used. Only
bipolar semiconductors are employed. A copy of the parts list and materials
can be provided for review.
The electronics used in the TCXO shall be single event latchup free.
Electrostatic Discharge Sensitivity
The TCXO supplied to this drawing shall be considered to be electrostatic
discharge sensitive and require further protection and shall use one of the
packaging requirements in accordance with MIL-PRF-38534, Category A,
Section 5.3.2.4 Transportability.
The TCXO shall be capable of being transported by air, ship or road when
packaged in a suitable container.
3.3
Design and Construction
The design and construction of the crystal oscillator shall be as specified herein. As a minimum, the
oscillators shall meet the design and construction requirements of MIL-PRF-55310, except element
evaluation shall be as specified in 3.3.1.
Operation
Design, Construction &
Component Screen (see 3.3.2)
MIL-PRF-55310 Class S
Workmanship
M883, Method 2017 for Class S
Screening
MIL-PRF-55310 Class S
Non-Destruct Wire Bond Pull
100%, M883, Method 2023 (2.4 grams)
Internal Visual
MIL-STD-883, methods 2017 & 2032 condition K (class S). During the time
interval between final internal visual inspection and preparation for sealing,
hybrid crystal oscillators shall be stored in a dry, controlled environment as
defined in MIL-STD-883, method 2017 or in a vacuum bake oven.
Stabilization Bake
48 hrs minimum @ +150 C M883, Method 1008 TC B
Thermal Shock
M883, Method 1011, TC A
Temperature Cycling
M883, Method 1010, TC B
Constant Acceleration
M883, Method 2001, TC A (5000 gs, Y1 Axis only)
Seal Test (fine & gross)
100% Method 1014, (TC A1 for fine leak and TC C for gross leak)
PIND
M883, Method 2020, TC B
Electrical Test
Frequency, Output levels, Input Current@ +25 C
Burn-In (Powered with load)
+125 C for 240 hours
Electrical Test
Frequency, Output levels, Input Current
@ +25°C & Temp Extremes listed on the Electrical Specification
Radiographic
M883, Method 2012 class S
Group A
100%
Group B (30 day Aging @ +70 C)
100%
External visual
883 Method 2009
相關(guān)PDF資料
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QT805V-150.000000-X TCXO, SINE OUTPUT, 150 MHz
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