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參數(shù)資料
| 型號： | QSD2030 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏二極管 |
| 英文描述： | PLASTIC SILICON PHOTODIODE |
| 中文描述： | PIN PHOTO DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 45K |
| 代理商： | QSD2030 |
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
1. Derate power dissipation linearly 1.33
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum
from housing.
PACKAGE DIMENSIONS
FEATURES
PIN Photodiode
Package type: T-1 3/4 (5mm lens diameter)
Wide Reception Angle, 40°
Package material and color: Clear epoxy
High Sensitivity
Peak Sensitivity
D
= 880 nm
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
BR
P
D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
100
Unit
°C
°C
°C
°C
V
mW
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Reverse Breakdown Voltage
Power Dissipation
(1)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
QSD2030
PLASTIC SILICON PHOTODIODE
PARAMETER
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Forward Voltage
Reverse Dark Current
Reverse Light Current
Capacitance
Rise Time
Fall Time
TEST CONDITIONS
SYMBOL
D
PS
D
SR
0
V
F
I
D
I
L
C
t
r
t
f
MIN
—
400
—
—
—
15
—
—
—
TYP
880
—
±20
1.3
—
25
60
5
5
MAX
—
1100
—
—
5
UNITS
nm
nm
Deg.
V
nA
μA
pF
I
F
= 80 mA
V
R
= 20 V, E
e
= 0
E
e
= 0.5 mW/cm
2
, V
R
= 5 V,
D
= 950 nm
V
R
= 0, f = 1 MHz, E
e
= 0
V
R
= 5 V, R
L
= 50
1
D
= 950 nm
—
—
—
ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C)
10/31/01
CATHODE
ANODE
SCHEMATIC
相關PDF資料 |
PDF描述 |
|---|---|
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| QSD423 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSD424 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSD722 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| QSD723 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| QSD2030_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Photodiode |
| QSD2030_Q | 功能描述:光電二極管 T-1 3- 4 SENSOR RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| QSD2030F | 功能描述:光電二極管 PIN PHOTODIODE RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| QSD2030F_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Photodiode |
| QSD2030F_13 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Photodiode |
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