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參數(shù)資料
| 型號： | QPP-003 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 60W, 869-894 MHz Class AB Power Stage |
| 中文描述： | 60瓦，869-894 MHz的AB類功率級 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 43K |
| 代理商： | QPP-003 |
Xemod QuikPAC Data
QPP-003
www.xemod.com
Rev A (11-21-00) Page 2 of
2
Performance at 28VDC & 25oC (continued)
Parameter
IMD Variation – 100 kHz to 25 MHz tone spacing
2
nd
Harmonic at 60W P
out
(single tone)
3
rd
Harmonic at 60W P
out
(single tone)
Group (Signal) Delay
Transmission Phase Flatness
Notes:
Symbol
τ
d
Min
Nom
1.0
-35
-55
3.6
0.5
Max
2.0
Units
dB
dBc
dBc
ns
degrees
This QuikPAC module requires an externally supplied gate voltage (V
GS
) on each gate lead (pins 1 and 5) to set the
operating point (quiescent current- I
DQ
) of the power transistors. V
GS
may be safely set to any voltage in the range listed in
the table. This permits a wide range of quiescent current to be used. Since the operating characteristics of the module will
vary as I
DQ
changes, the bias setting will depend on the application. The data provided in the Performance section of this
data sheet was obtained with I
DQ
set to a value within the range listed (a nominal value ±10%). This particular value was
chosen to optimize gain, IMD performance, and efficiency simultaneously.
Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive
oscillations. Bias voltages should never be applied to a module unless it is terminated on both input and output.
The V
GS
corresponding to a specific I
DQ
will vary from module to module and may vary between the two sides of a dual RF
module by as much as ±0.10 volts. This is due to the normal die-to-die variation in threshold voltage of LDMOS transistors.
Since the gate bias of an LDMOS transistor changes with device temperature, it may be necessary to use a V
GS
supply with
thermal compensation if operation over a wide temperature range is required.
Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time-varying waveforms.
The RF leads are internally protected against DC voltages up to 100V. Care should be taken to avoid video transients that
may damage the active devices.
Package Styles
This model is available in both B1 (H10536) and B1F (H11029) package styles. Style B1F is shown for reference. Please
see the applicable outline drawing for specific dimensions.
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